Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures

Tetelbaum, D. I.; Гусейнов, Д. В.; Vasiliev, V. K.; Mikhaylov, A. N.; Белов, А. И.; Королев, Д. С.; Obolensky, S. V.; Kachemtsev, A. N.

doi:10.1016/j.nimb.2013.10.067

Cited by 11 publications

(6 citation statements)

References 6 publications

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“…Owing to the low thickness of the MIM structure, medium-energy irradiation with protons and higher-mass ions can be used to simulate the effect of high-energy space protons or fission neutrons [37]. Equivalent doses of medium-energy ions can be chosen such that the ionizing losses and the displacement damage in the switching layer correspond to the effect produced by high-energy particles.…”

Section: Effect Of Irradiationmentioning

confidence: 99%

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Mikhaylov

Gryaznov

Belov

et al. 2016

Phys. Status Solidi C

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The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and rupture of conductive pathways (filaments) in oxide films due to the electric-field-driven migration of oxygen vacancies and/or mobile oxygen ions. It is shown that, for both ionic and covalent oxides under study, the RS behaviour depends only weakly on the oxide film composition and thickness, device geometry (down to a device size of about 20x20 mu m(2)). The devices under study are found to be tolerant to ion irradiation that reproduces the effect of extreme fluences of high-energy protons and fast neutrons. This common behaviour of RS is explained by the localized nature of the redox processes in a nanoscale switching oxide volume. Adaptive (synaptic) change of resistive states of memristive devices is demonstrated under the action of single or repeated electrical pulses, as well as in a simple model of coupled (synchronized) neuron-like generators. It is concluded that the noise-induced phenomena cannot be neglected in the consideration of a memristive device as a nonlinear system. The dynamic response of a memristive device to periodic signals of complex waveform can be predicted and tailored from the viewpoint of stochastic resonance concept. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

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Section: Effect Of Irradiationmentioning

confidence: 99%

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Mikhaylov

Gryaznov

Belov

et al. 2016

Phys. Status Solidi C

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“…Kapton or G11CR-type glass fibre reinforced plastic composites), as reported in our previous work (4). Heavy ions can be used to simulate damage caused by long-term exposure in mixed radiation fields containing also neutrons (5). That is why studying the influence of heavy-ion bombardment on the magnetic properties of the materials used in the accelerator RF cavities is of scientific as well as practical importance.…”

Section: Introductionmentioning

confidence: 92%

Radiation damage studies of soft magnetic metallic glasses irradiated with high-energy heavy ions

Pavlovič

Miglierini

Мустафин

et al. 2015

Radiation Effects and Defects in Solids

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Some soft magnetic metallic glasses are considered for use in magnetic cores of accelerator radio frequency cavities. Due to losses of the circulating ion beam, they may be exposed to irradiation by different ions at different energies. This paper presents data and review results of irradiation experiments concerning the influence of high-energy heavy ions on magnetic susceptibility of VITROPERM ® -type metallic glasses. Samples of the VITROPERM ® magnetic ribbons were irradiated by Au, Xe and U ions at 11.1 MeV/A (per nucleon) and 5.9 MeV/A, respectively. Irradiation fluences from 1 × 10 11 up to 1 × 10 13 ions/cm 2 were applied. In case of the Au and U ions, the total fluence was accumulated in one beamtime, whereas two separate beamtimes were used to accumulate the final fluence in case of the Xe ions. Relative change in the samples' magnetic susceptibility after and before irradiation was evaluated as a function of the irradiation fluence. The irradiation experiments were performed with the UNILAC accelerator at GSI Helmholtzzentrum für Schwerionenforschung GmbH. They were simulated in SRIM2010 in order to obtain ionization densities (electronic stopping, dE/dx) and dpa (displacements per atom) caused by the ion beams in the sample material. This paper focuses mainly on the results collected in experiments with the Xe ions and compares them with data obtained in earlier experiments using Au and U ions. Radiation hardness of VITROPERM ® is compared with radiation hardness of VITROVAC ® that was studied in previous experiments. The VITROPERM ® samples showed less drop in magnetic susceptibility in comparison with the VITROVAC ® ones, and this drop occurred at higher fluences. This indicates higher radiation hardness of VITROPERM ® compared with VITROVAC ® . In addition, heavier ions cause bigger change in magnetic susceptibility than the lighter ones. The effect can be roughly scaled with electronic stopping, which suggests that the main mechanism of radiation damage is associated with swift electrons generated in the material via ionization by primary heavy ions.

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“…It is well‐established that the properties of matter can be substantially altered upon exposure to different kinds of external radiation, such as high energy electrons,28,29 X‐rays,30 neutrons,31 ions,32 and lasers 33. In several circumstances the irradiation of a specimen provokes detrimental effects on its structural and electronic properties due to heating, ionization damage, sputtering or contamination 34–36.…”

Section: Figurementioning

confidence: 99%

Configurable Resistive Response in BaTiO₃ Ferroelectric Memristors via Electron Beam Radiation

et al. 2020

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Ferroelectric oxide memristors are currently in the highlights of a thriving area of research aiming at the development of nonvolatile, adaptive memories for applications in neuromorphic computing. However, to date a precise control of synapse‐like functionalities by adjusting the interplay between ferroelectric polarization and resistive switching processes is still an ongoing challenge. Here, it is shown that by means of controlled electron beam radiation, a prototypical ferroelectric film of BaTiO3 can be turned into a memristor with multiple configurable resistance states. Ex situ and in situ analyses of current/voltage characteristics upon electron beam exposure confirm the quasi‐continuous variation of BaTiO3 resistance up to two orders of magnitude under the typical experimental conditions employed in electron beam patterning and characterization techniques. These results demonstrate an unprecedented effective route to locally and scalably engineering multilevel ferroelectric memristors via application of moderate electron beam radiation.

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Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures

Cited by 11 publications

References 6 publications

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Radiation damage studies of soft magnetic metallic glasses irradiated with high-energy heavy ions

Configurable Resistive Response in BaTiO₃ Ferroelectric Memristors via Electron Beam Radiation

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Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures

Cited by 11 publications

References 6 publications

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

Radiation damage studies of soft magnetic metallic glasses irradiated with high-energy heavy ions

Configurable Resistive Response in BaTiO3 Ferroelectric Memristors via Electron Beam Radiation

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Configurable Resistive Response in BaTiO₃ Ferroelectric Memristors via Electron Beam Radiation