Ion beam sputter deposited TiAlN films for metal–insulator–metal (Ba,Sr)TiO3 capacitor application

Lee, Sheng Yi; Wang, Sheng Chang; Chen, Jen‐Sue; Huang, Jow–Lay

doi:10.1016/j.tsf.2008.04.046

Cited by 3 publications

(1 citation statement)

References 27 publications

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“…A better method to fabricate insulating layer always keeps forging ahead. For example, ion beam oxidation, 93 glow discharge, 94,95 plasma, 96 atomic-oxygen exposure 97 and ultraviolet-stimulated oxygen exposure 98 have been used as alternate ways for the insulator-layer deposition. In terms of preparation and processing, the issues about the control of the oxide barrier and the interfaces, the shielding tolerance, the thermal stability, and the robustness of the lifetime of the device need to be solved urgently.…”

Section: Mtjsmentioning

confidence: 99%

Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

Zhang

Zhou

et al. 2021

Applied Physics Reviews

100

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As Moore's law is gradually losing its effectiveness, developing alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) has given rise to a tremendous economic impact on magnetic informatics, including MRAM, radio-frequency sensors, microwave generators and neuromorphic computing networks. The emergence of twodimensional (2D) materials brings opportunities for MTJs based on 2D materials which have many attractive characters and advantages. Especially, the recently discovered intrinsic 2D ferromagnetic materials with high spin-polarization hold the promise for next-generation nanoscale MTJs. With the development of advanced 2D materials, many efforts on MTJs with 2D materials have been made both theoretically and experimentally. Various 2D materials, such as semi-metallic graphene, insulating h-BN, semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2 and some other recently emerged 2D materials are discussed as the electrodes and/or central scattering materials of MTJs in this review. We discuss the fundamental and main issues facing MTJs, and review the current progress made with 2D MTJs, briefly comment on work with some specific 2D materials, and highlight how they address the current challenges in MTJs, and finally offer an outlook and perspective of 2D MTJs.

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Section: Mtjsmentioning

confidence: 99%

Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

Zhang

Zhou

et al. 2021

Applied Physics Reviews

100

View full text Add to dashboard Cite

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Tunneling injection to trap-limited space-charge conduction for metal-insulator junction

Chua

Ang

2022

Applied Physics Letters

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For a biased trap-filled insulator, the current transport is governed by the physics of charge injection from the metallic electrode and also the trap-limited space-charge conduction in the insulator. With a Schottky barrier at the interface of the metal-insulator junction, charge tunneling injection from a metal into the trap-filled insulator is different from an Ohmic contact. At sufficiently large amount of charge injection at high voltages, the charge transport becomes the trap-limited space-charge conduction. In this paper, we develop a consistent model to calculate the correct IV characteristics up to a breakdown field strength of 1 V/nm. Using this model, we analyze the transport characteristic of three different metal-insulator junctions (ITO/PPV, Al/h-BN, and Al/ZrO2) and identify the conduction mechanisms over a wide range of the applied voltage, insulator's thickness, and properties of the traps. Our findings report the interplay between various transport mechanisms, which is useful to characterize the correct current transport for novel insulators such as organic semiconductors, 2D insulators, and metal-oxide electronics.

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Microstructure and Wear Properties Analysis of TiAlN Film Deposited on Cam Profile Using Ion Sputtering

Zhang

Wang

Guo

et al. 2013

Tribology Transactions

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Ion beam sputter deposited TiAlN films for metal–insulator–metal (Ba,Sr)TiO3 capacitor application

Cited by 3 publications

References 27 publications

Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

Tunneling injection to trap-limited space-charge conduction for metal-insulator junction

Microstructure and Wear Properties Analysis of TiAlN Film Deposited on Cam Profile Using Ion Sputtering

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