Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

Bundesmann, Carsten; Feder, René; Wunderlich, Ralf; Teschner, Ulrike; Grundmann, Marius; Neumann, H.

doi:10.1016/j.tsf.2015.06.017

Cited by 22 publications

(10 citation statements)

References 21 publications

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“…Recently, we reported about the systematic investigation of the properties of secondary particles and thin films in the ion beam sputter deposition process of Si [12], Ge [13,14] and Ag [12,15,16]. Here we present, to a larger extend than in previous reports, measured energy distributions of sputtered and backscattered particles in the ion beam sputter process of Ag.…”

Section: Introductionmentioning

confidence: 82%

“…A more detailed discussion of thin film properties in the ion beam sputter deposition process of Ag and Ge is given in Ref. [16] and [14].…”

Section: Discussionmentioning

confidence: 99%

“…The RF-power was set to 70 W, which resulted in a total ion beam current of about 10 mA for both ion species. The ion source as well as the target were mounted on rotary tables on identical rotation axes in order to vary the primary ion incidence angle α and the polar emission angle β. Additionally, a sample holder could be mounted in the chamber for thin film deposition [14,16]. A detailed view on the experimental setup is given in Ref.…”

Section: Methodsmentioning

confidence: 99%

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Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

Bundesmann

Feder

Lautenschläger

et al. 2015

Contrib. Plasma Phys.

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Ion beam sputter deposition allows tailoring the properties of the film-forming, secondary particles (sputtered target particles and backscattered primary particles) and, hence, thin film properties by changing ion beam (ion energy, ion species) and geometrical parameters (ion incidence angle, polar emission angle). In particular, the energy distribution of secondary particles and their influence on the ion beam deposition process of Ag was studied in dependence on process parameters. Energy-selective mass spectrometry was used to measure the energy distribution of sputtered and backscattered ions. The energy distribution of the sputtered particles shows, in accordance with theory, a maximum at low energy and an E −2 decay for energies above the maximum. If the sum of incidence angle and polar emission angle is larger than 90• , additional contributions due to direct sputtering events occur. The energy distribution of the backscattered primary particles can show contributions by scattering at target particles and at implanted primary particles. The occurrence of these contributions depends again strongly on the scattering geometry but also on the primary ion species. The energy of directly sputtered and backscattered particles was calculated using equations based on simple two-particle-interaction whereas the energy distribution was simulated using the well-known Monte Carlo code TRIM.SP. In principal, the calculation and simulation data agree well with the experimental findings.

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Section: Introductionmentioning

confidence: 82%

“…A more detailed discussion of thin film properties in the ion beam sputter deposition process of Ag and Ge is given in Ref. [16] and [14].…”

Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

Bundesmann

Feder

Lautenschläger

et al. 2015

Contrib. Plasma Phys.

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“…Deshalb wurden am Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM) in den vergangenen Jahren umfangreiche, systematische Untersuchungen zum Ionenstrahlzerstäuben an verschiedenen Materialsystemen durchgeführt: Ag (Metall, [7,8]), Ge (Halbleiter, [9,10]), TiO 2 (Dielektrikum, [11,[13][14][15][16]) oder SiO 2 (Dielektrikum, [17,18]…”

Section: Ion Beam Sputter Deposition -Fundamentals and Application Founclassified

Schichtabscheidung mittels Ionenstrahlzerstäuben

Bundesmann

2019

Vak Forsch Prax

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Summary Ion Beam Sputter Deposition – Fundamentals and Application for Tailoring Thin Film Properties Ion beam sputter deposition (IBSD) is a PVD technique, which, in comparison to other PVD techniques, is known to produce thin films with desirable properties, for instance, with improved adhesion, dense film structure, less defects, higher purity, less particle contamination, and better controlled composition. Recent systematic and comprehensive investigations of the fundamentals of the whole IBSD process revealed previously unemployed opportunities for tailoring thin film properties over a wide range. The main process parameters were identified to be the scattering geometry and the ion species, or, to be more precise, the mass of the primary ion relative to the mass of the target particle. By choosing these parameters appropriately, structural, optical or electrical properties, to name but a few, can be adjusted according to the technological requirements. The present contribution aims on illustrating these opportunities by presenting the main fundamentals and selected examples.

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“…Studies on the crystallization properties of Ge began in the 1960's . These studies often refer to bulk material, or coatings deposited by methods, such as evaporation or ion beam sputter deposition, and chemical vapor deposition . For applications requiring precision film deposition, compared to the previously mentioned deposition methods, magnetron sputtering offers the possibility of fine‐tuning of deposition conditions, film composition, and uniformity of the as‐deposited films, while keeping the process itself relatively simple.…”

Section: Introductionmentioning

confidence: 99%

Influence of Substrate Temperature and Film Thickness on Thermal, Electrical, and Structural Properties of HPPMS and DC Magnetron Sputtered Ge Thin Films

et al. 2017

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Ge was deposited as thickness gradient films at temperatures up to 800 C by direct current (DC) and high power pulsed magnetron sputtering (HPPMS). Structural characterization shows increased crystallization with increasing substrate temperature and film thickness. Thermal conductivity was measured by a novel high throughput time domain thermo reflectance method. Thermo electrical properties correlate to the degree of crystallization. Conductivities increase with increasing substrate temperature up to 500 C. For higher temperatures the trend reverses. A room temperature deposited/ annealed film displays smaller crystallites (10 nm) and lower thermal conductivity (5

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Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

Cited by 22 publications

References 21 publications

Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

Schichtabscheidung mittels Ionenstrahlzerstäuben

Influence of Substrate Temperature and Film Thickness on Thermal, Electrical, and Structural Properties of HPPMS and DC Magnetron Sputtered Ge Thin Films

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