Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

Королев, Д. С.; Matyunina, Kristina S.; Nikolskaya, Alena A.; Kriukov, R. N.; Nezhdanov, Alexey V.; Belov, A. I.; Mikhaylov, A. N.; Sushkov, A. A.; Павлов, Д. А.; Yunin, P. A.; Дроздов, М. Н.; Tetelbaum, D. I.

doi:10.3390/nano12111840

Cited by 4 publications

(11 citation statements)

References 31 publications

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“…An analysis of the obtained data shows that Ga 2 O 3 nanoinclusions are formed in two different crystalline phases, β-Ga 2 O 3 and γ-Ga 2 O 3 . This partially agrees with the previously obtained data on the ion synthesis of the nc-Ga 2 O 3 obtained by annealing in a nitrogen atmosphere, for which the formation of β-phase nanocrystals was found [ 22 ]. One of the possible explanations for the observed difference can be the following.…”

Section: Resultssupporting

confidence: 92%

“…One of the possible explanations for the observed difference can be the following. As was assumed earlier [ 22 ], during the ion synthesis of Ga 2 O 3 nanocrystals, chemical bonds between gallium and oxygen (Ga x O y complexes) were formed after irradiation. These bonds serve as the centers for the nucleation of a new phase.…”

Section: Resultsmentioning

confidence: 84%

“…The study of the chemical composition of the implanted samples before and after annealing was carried out by the XPS method, which makes it possible to implement elemental analysis by taking into account the shifts of the photoelectron lines that are caused by the chemical bonds of atoms with their environment. In our previous work [ 22 ], the distribution profiles of implanted gallium and oxygen atoms in SiO 2 /Si samples that were not subjected to post-implantation annealing were investigated. It was established that, even in the absence of annealing, all samples contain not only gallium in the elemental state, but also oxidized gallium in the stoichiometric Ga 2 O 3 and the oxygen-deficient Ga 2 O states.…”

Section: Resultsmentioning

confidence: 99%

“…Previously, we demonstrated the possibility of ion-beam syntheses of Ga 2 O 3 nanocrystals in dielectric matrices, showed the promise of using this method to create “solar-blind” photodetectors [ 21 ], and studied their structural and light-emitting properties [ 22 ]. However, the change in the chemical composition of the synthesized structures as a result of post-implantation annealing—which plays a determining role in the formation of Ga 2 O 3 nanocrystalline inclusions, as well as the influence of the post-implantation annealing atmosphere—have not been studied yet.…”

Section: Introductionmentioning

confidence: 99%

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Structure and Chemical Composition of Ion-Synthesized Gallium Oxide Nanocrystals in Dielectric Matrices

et al. 2023

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The ion-beam synthesis of Ga2O3 nanocrystals in dielectric matrices on silicon is a novel and promising way for creating nanomaterials based on gallium oxide. This research studies the regularities of changes, depending on the synthesis regimes used, in the chemical composition of ion-implanted SiO2/Si and Al2O3/Si samples. It has been shown that the formation of Ga-O chemical bonds occurs even in the absence of thermal annealing. We also found the conditions of ion irradiation and annealing at which the content of oxidized gallium in the stochiometric state of Ga2O3 exceeds 90%. For this structure, the formation of Ga2O3 nanocrystalline inclusions was confirmed by transmission electron microscopy.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 84%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Structure and Chemical Composition of Ion-Synthesized Gallium Oxide Nanocrystals in Dielectric Matrices

et al. 2023

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“…under these treatment conditions. Even under the assumption that all embedded Ga atoms migrate to the surface during annealing and chemically interact with the components of the native oxide film according to reaction [22]:…”

Section: Discussionmentioning

confidence: 99%

Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam

Shandyba,

Kirichenko,

Sharov

et al. 2023

Nanotechnology

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We reveal a novel phenomenon observed after self-catalytic growth of GaAs nanowires on Si(111) substrates treated with a Ga focused ion beam (FIB). Depending on the ion dose, nanowire arrays with various geometrical parameters can be obtained. A minor treatment of the substrate enables a slight increase in the surface density of nanowires relative to an unmodified substrate area. As the ion dose is increased up to ~0.1 pC/µm2, the growth of GaAs nanowires and nanocrystals is suppressed. However, a further increase in the ion dose stimulates the crystal growth leading to the formation of extremely thin nanowires (39 ± 5 nm) with a remarkably high surface density of up to 15 µm-2. Resting upon an analysis of the surface structure before and after stages of ion-beam treatment, ultra-high vacuum annealing and nanowire growth, we propose a mechanism underlying the phenomenon observed. We assume that the chemical interaction between embedded Ga ions and a native Si oxide layer leads either to the enhancement of the passivation properties of the oxide layer within FIB-modified areas (at low and middle ion doses), or to the etching of the passivating oxide layer by excess Ga atoms, resulting in the formation of pores (at high ion doses). Due to this behavior, local fabrication of GaAs nanowire arrays with a diverse range of characteristics can be implemented on the same substrate. This approach opens a new way for self-catalytic growth of GaAs nanowires.

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Effect of Si(111) Surface Modification by Ga Focused Ion Beam at 30 kV on GaAs Nanowire Growth

Shandyba

Balakirev

Sharov

et al. 2022

IJMS

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This paper presents the results of experimental studies of the effect of Si(111) surface modification by Ga-focused ion beam (FIB) at 30 kV accelerating voltage on the features of the epitaxial GaAs nanowire (NW) growth processes. We experimentally established the regularities of the Ga ions’ dose effect during surface modification on the structural characteristics of GaAs NW arrays. Depending on the Ga ion dose value, there is one of three modes on the surface for subsequent GaAs NW growth. At low doses, the NW growth is almost completely suppressed. The growth mode of high-density (up to 6.56 µm−2) GaAs NW arrays with a maximum fraction (up to 70%) of nanowires normally oriented to the substrate is realized in the medium ion doses range. A continuous polycrystalline base with a dense array of misoriented short (up to 0.9 µm) and thin (up to 27 nm) GaAs NWs is formed at high doses. We assume that the key role is played by the interaction of the implanted Ga ions with the surface at various process stages and its influence on the surface structure in the modification region and on GaAs NW growth conditions.

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Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

Cited by 4 publications

References 31 publications

Structure and Chemical Composition of Ion-Synthesized Gallium Oxide Nanocrystals in Dielectric Matrices

Structure and Chemical Composition of Ion-Synthesized Gallium Oxide Nanocrystals in Dielectric Matrices

Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam

Effect of Si(111) Surface Modification by Ga Focused Ion Beam at 30 kV on GaAs Nanowire Growth

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