Ion beam texturing

Hudson, W. R.

doi:10.1116/1.569142

Cited by 61 publications

(2 citation statements)

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“…4 Growing the structures p-side-down is undesirable because of the Mg memory effect. 13,14 Both the facet formation on the mask edge and the redeposition of the etching target material around the structures have important influences on the sidewalls of etched structures, and ultimately determine the morphology. [6][7][8][9][10] Studies have shown that several different patterns, whether random or periodic, have been useful toward improving light extraction efficiency, including cone, 6 pyramids, 7 microlens arrays, 8 and highly integrated surface textures.…”

Section: Introductionmentioning

confidence: 99%

Light extraction enhancement in GaN-based vertical light-emitting diodes with hemispherical bumps

Wang

Zhu

Shen

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Ion beam etching technology was applied to the surfaces of GaN-based vertical light-emitting diodes (V-LEDs). The ability to control morphology using this technology resulted in very uniform, hexagonal, closely packed hemispherical bumps on the n-type GaN layer. The textured V-LEDs showed a remarkable increase (130%) in light output power compared to the original, and no electrical deterioration was noted. This study demonstrates that ion beam etching is an effective approach for fabricating hemispherical bumps to achieve increased light extraction efficiency in GaN-based V-LEDs, and potentially other optical devices.

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