Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory

Liu, Sheng Hsien; Wu, Chi Chang; Yang, Wen; Lin, Yu Hsien; Chao, Tien Sheng

doi:10.1109/ted.2014.2341629

Cited by 2 publications

(2 citation statements)

References 19 publications

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“…However, as technology continually shrinks the dimensions of these devices, they encounter challenges related to disturbance and charge storage. (7) To address these issues, various nonvolatile memory alternatives have been explored as potential replacements for flash memory. Notable candidates in this pursuit include ferroelectric random access memory (FeRAM), (8) phase-change random access memory (PCRAM), (9) magnetic random access memory (MRAM), (10) and resistive random access memory (ReRAM).…”

Section: Introductionmentioning

confidence: 99%

Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristics

Lin,

Yu,

Cheng

et al. 2024

Sensors and Materials

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Nonvolatile memory devices play a pivotal role within sensor systems, serving as integral components that significantly enhance the efficiency, reliability, and overall performance of these advanced technologies. In this paper, we present a nonvolatile oxide-based resistive memory device employing a chemical displacement technique (CDT) for copper thin film as the metal electrode. The utilization of CDT-Cu offers several distinct advantages, including costeffectiveness, high selectivity, and the ability to operate at lower temperatures. Notably, the CDT-Cu film exhibits a rough surface, which proves advantageous for facilitating the formation of filament pathways in the electrochemical metallization (ECM)-type resistive random-access memory (ReRAM) device. We systematically investigated the surface roughness of CDT-Cu samples, varying chemical displacement time, to shed light on the influence of the Cu electrode on the electrical performance of the resistive memory devices. The findings indicate that devices subjected to shorter CDT times, which yields rougher surfaces, demonstrate lower operation electric fields and enhanced reliability. This is attributed to the reduced voltage requirements, effectively mitigating the impact of Joule heating during device operation.

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Section: Introductionmentioning

confidence: 99%

Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristics

Lin,

Yu,

Cheng

et al. 2024

Sensors and Materials

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“…Moreover, several studies have presented various types of high- k dielectric trapping layers as potential candidates for replacing Si 3 N 4 to provide discrete NVM charge storage [11,12,13,14,15,16]. Furthermore, high- k dielectric materials can improve the gate capacitance, and maintain an equivalent potential difference for a greater thickness compared with SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory

Lin

Yang

2015

Materials

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This paper presents a novel TaN-Al2O3-HfSiOx-SiO2-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiOx/SiO2 interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunnel oxide–charge storage layer interface increases the programming speed and provides satisfactory retention. This NVM device has a high program/erase (P/E) speed; a 2-V memory window can be achieved by applying 16 V for 10 μs. Regarding high-temperature retention characteristics, 62% of the initial memory window was maintained after 103 P/E-cycle stress in a 10-year simulation. This paper discusses the performance improvement enabled by using dipole layer engineering in the TAHOS NVM.

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Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory

Cited by 2 publications

References 19 publications

Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristics

Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristics

Work Function Adjustment by Using Dipole Engineering for TaN-Al2O3-Si3N4-HfSiOx-Silicon Nonvolatile Memory

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