Ion bombardment of Ni(110) studied with inverse photoemission spectroscopy and low-energy electron diffraction

Spatial distribution of topological surface state electrons in Bi2Te3 probed by low-energy Na+ ion scattering

“…3, the difference between the Bi and Te NFs decreases with sputtering. Note that the difference does not go completely to zero, but this is likely because sputtered materials do exhibit some amount of self-annealing at room temperature 9 [33] so that portions of the surface still have the Te-terminated structure of the active TI and thus contain the TSS electron distribution. When the sputtered sample is annealed at 340°C for 30 min to recrystallize the material, the NF difference and the 1x1 LEED pattern are fully recovered.…”

Enhancement of Spontaneous Photon Emission in Inverse Photoemission Transitions in Semiconductor Quantum Dots

“…One can infer information about the unoccupied states by using the kinetic energy of the incident electron and the energy of the emitted photon. IPE, which is also referred to as radiative electron capture, has been previously used for studying electron–ion radiative recombination in electron scattering events. , IPE spectroscopy has been used to investigate the unoccupied states of various chemical systems and materials, − for example, the LUMO energies of various π-conjugated organic molecules and molecular organic semiconductors. − In conjunction with other techniques, IPE spectroscopy has been used to investigate the band structure of spatially aligned graphene nanoribbons on stepped Au(788) surfaces and has also been used to probe the conduction bands of solar cell components and PbS quantum dots in thin films. − IPE spectroscopy has also been used to investigate the effects of ion bombardment on the unoccupied electronic surface states of Ni(110) . A newer technique, low-energy inverse photoemission spectroscopy (LEIPS), was developed to circumvent the damaging effects of IPE spectroscopy on organic semiconductors .…”

“… 10 − 12 IPE spectroscopy has also been used to investigate the effects of ion bombardment on the unoccupied electronic surface states of Ni(110). 13 A newer technique, low-energy inverse photoemission spectroscopy (LEIPS), was developed to circumvent the damaging effects of IPE spectroscopy on organic semiconductors. 14 It has been shown that the signal intensity for LEIPS can be enhanced by exploiting the occurrence of surface plasmon resonance in Ag nanoparticles.…”