Ion fractions in the scattering of hydrogen on different reconstructed silicon surfaces

García, Evelina A.; Pascual, C.; Bolcatto, P. G.; Passeggi, M. C. G.; Goldberg, E. C.

doi:10.1016/j.susc.2006.03.008

Cited by 20 publications

(16 citation statements)

References 57 publications

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“…25 As far as we know, there are only a few studies on semiconductor surfaces. [26][27][28][29][30][31][32][33][34][35][36][37][38][39] Most of these studies mainly involved the neutralization and negative-ion formation of positive projectiles scattering on silicon surfaces. The H − formation on a Si surface has been studied experimentally and theoretically.…”

Section: Introductionmentioning

confidence: 99%

“…The H − formation on a Si surface has been studied experimentally and theoretically. [31][32][33][34][35][36][37][38][39] The s character of the H − ion state is particularly simple because there is only one orientation of the atomic state with respect to the surface. In contrast, only a few studies on other types of negative ions have been performed so far.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nonadiabatic dynamics in energetic negative fluorine ions scattering from a Si(100) surface

Chen

Qiu

Xiong

et al. 2015

The Journal of Chemical Physics

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The dependence of the negative-ion fractions on incident energy and angle is reported for 8.5-22.5 keV F(-) ions scattered from a Si(100) surface at a fixed scattering angle of 38°. The negative-ion fraction increases monotonically with incident velocity for specular scattering. In particular, the variation of the fraction with incident angle is bell shaped for a given incident energy. We interpret this variation using the incident-velocity effect at short distances where the yield of negative ions depends on the number of initial neutrals. It strongly indicates that at short distances, a dynamical equilibrium population is never achieved. This nonadiabatic feature is supported by simple calculations using modified rate equations.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nonadiabatic dynamics in energetic negative fluorine ions scattering from a Si(100) surface

Chen

Qiu

Xiong

et al. 2015

The Journal of Chemical Physics

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“…[1], Maazouz et al suggest that electron capture near Si surfaces is a dynamic, velocitydependent, quasiresonant process that involves interactions of the projectile AL with a narrow band of surface states. A subsequent theoretical model for the formation of H − on (2 × 1)-Si(100) and (7 × 7)-Si(111) reconstructed surfaces [15] reproduces the general trends of the measured hydrogen anion yield based on an appropriate parametrization of the NewnsAnderson model [16][17][18][19]. This theoretical investigation [15] found a strong dependence of the final projectile charge states on the scattering trajectories considered and reproduced the experimental data after averaging over trajectories.…”

Section: Introductionmentioning

confidence: 73%

“…We evaluate the time integrals in Eqs. (15) and (18) by trapezoidal quadrature and approximate the time derivative by two-point finite differences. The initial conditions correspond to neutral hydrogen atoms approaching the substrate at a collision energy of 1 keV.…”

Section: Charge-transfer Dynamicsmentioning

confidence: 99%

Hydrogen-anion formation near a (2×1)-reconstructed Si(100) surface: Substrate-electronic-structure and trajectory dependence

Obreshkov

Thumm

2011

Phys. Rev. A

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We calculated the yield of outgoing hydrogen negative ions after the reflection of 1-keV neutral hydrogen atoms from a (2 × 1)-reconstructed Si(100) surface. We find that the charge-transfer dynamics at the reconstructed surface is dependent on both the surface-electronic structure and orientation of the projectile trajectory relative to the crystal azimuthal directions. Our results are in good quantitative agreement with the measured H − fractions of Maazouz and Esaulov [Surf. Sci. 398, 49 (1998)] for scattering trajectories that are aligned perpendicularly to rows of silicon dimers.

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“…Concerning to these analysis, it is well known that the Keldysh formalism [9] has been often used, because this method was developed for the purpose of being applicable to non-equilibrium states such as TDAN. Consequently analysis on the basis of the above formalism have been reported and discussed in the field of surface science [10][11][12][13][14][15][16].…”

mentioning

confidence: 99%

New Neumerical Method to Calculate Time-Dependent Quantum Properties in Finite Temperature Based on the Heisenberg Equation of Motion

Kondo¹

2012

JMP

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For the purpose of computer calculation to evaluate time-dependent quantum properties in finite temperature, we propose new numerical method expressed in the forms of simultaneous differential equations. At first we derive the equation of motion in finite temperature, which is found to be same expression as Heisenberg equation of motion except for the c-number. Based on this equation, we construct numerical method to estimate time-dependent physical properties in finite temperature precisely without using analytical procedures such as Keldysh formalism. Since our approach is so simple and is based on the simultaneous differential equations including no terms related to self-energies, computer programming can be easily performed. It is possible to estimate exact time-dependent physical properties, providing that Hamiltonian of the system is taken to be a one-electron picture. Furthermore, we refer to the application to the many body problem and it is numerically possible to calculate physical properties using Hartree Fock approximation. Our numerical method can be applied to the case even when perturbative Hamiltonians are newly introduced or Hamiltonian shows complex time-dependent behavior. In this article, at first, we derive the equation of motion in finite temperature. Secondly, for the purpose of verification and of exhibiting the usefulness, we show the derivation of gap equation of superconductivity and of sum rule of electrical conductivity and the application to the many body problem. Finally we apply this method to these two cases: the first case is most simplified resonance charge transfer neutralization of an ion and the second is the same process but impurity potential is newly introduced as perturbative Hamiltonian. Through both cases, it is found that neutralization process is not so sensitive to temperature, however, impurity potential as small as 10 meV strongly influences the neutralization of ion.

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Ion fractions in the scattering of hydrogen on different reconstructed silicon surfaces

Cited by 20 publications

References 57 publications

Nonadiabatic dynamics in energetic negative fluorine ions scattering from a Si(100) surface

Nonadiabatic dynamics in energetic negative fluorine ions scattering from a Si(100) surface

Hydrogen-anion formation near a (2×1)-reconstructed Si(100) surface: Substrate-electronic-structure and trajectory dependence

New Neumerical Method to Calculate Time-Dependent Quantum Properties in Finite Temperature Based on the Heisenberg Equation of Motion

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