Ion Implantation

Grob, Jean‐Jacques

doi:10.1002/9781118601044.ch2

Cited by 3 publications

(3 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One plausible explanation is that after full amorphization of the lattice the stopping layer recrystallizes following the template provided by the unaffected diamond layers underneath. As stated in the introduction, this phenomenon is called solid phase epitaxy (SPE) and is used frequently in implanted silicon for healing the damaged layers after implantation [14], but has never been clearly observed before in diamond.…”

Section: Raman Spectramentioning

confidence: 99%

“…Otherwise, if pockets of ordered lattice remain, recrystallization leads to a polycrystalline layer. For silicon films, where bonding is weaker, solid phase epitaxy is observed in a limited window of annealing temperatures around 500 • C [13,14]. Therefore in the near future we plan to test other annealing temperatures around 1000 • C to get the window of temperatures for diamond.…”

Section: Raman Spectramentioning

confidence: 99%

“…Under certain conditions the layers amorphized by irradiation can recrystallize by solid phase epitaxy (SPE) in which the amorphous-crystalline interface, originally at the end of range of the ions, moves towards the surface [12]. SPE can produce layers of high quality that accept doping levels above those obtained under thermal equilibrium and is well studied in silicon [13,14]. The annealing of defects in diamond, however, is a complex issue, since broken carbon bonds can rearrange in different hybridization forms: sp 3 bonding (diamond), sp 2 bonding (graphite), or sp bonding (polymer).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Agulló-Rueda

Gordillo

Ynsa

et al. 2017

Carbon

View full text Add to dashboard Cite

We have studied the radiation damage in diamond as a function of layer depth upon self-ion implantation with 9-MeV carbon ions and its recovery after annealing at 1000 • C. Raman and photoluminescence spectra show substantial damage of the lattice, namely, amorphization, neutral vacancies, and interstitial defects. Damage is maximum in the stopping layer at a depth of 4 µm. After annealing there is some recovery of the lattice, but the residual damage increases with fluence, up to about 2 × 10 16 ions/cm 2. At this fluence the stopping layer becomes highly disordered and does not heal with annealing. Surprisingly, for higher fluence values, of about 5 × 10 16 ions/cm 2 , there is almost no residual damage. After full amorphization is reached, the layers appear to recrystallize by solid phase epitaxy (SPE), using the pristine diamond layers underneath as a template. These results prove that graphitization of diamond after annealing can be avoided in deeply buried layers, implanted at fluences much higher than expected. High fluences, in fact, can lead to high quality diamond layers. If SPE can be confirmed, it would have a great interest for diamond device applications, as it allows for higher doping levels. ion irradiation 9-MeV C ions micro-spectroscopy 10 μm stopping layer Figure 1: Scheme of the experimental procedure. A diamond crystal was implanted with 9-MeV 12 C 3+ ions at different fluences and then annealed at 1000 • C for 1 h. Optical microspectroscopy measurements were performed both after implantation and after annealing. The inset shows an actual transmission light micrograph of an implanted stripe as seen from the top sample surface (fluence 130 × 10 14 ions/cm 3).

show abstract

Section: Raman Spectramentioning

confidence: 99%

Section: Raman Spectramentioning

confidence: 99%