Ion Implantation

Wood, J. V.; Majumdar, Gautam

doi:10.1016/b978-0-12-803581-8.03724-3

Cited by 6 publications

(15 citation statements)

References 16 publications

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“…The hardness of un-implanted materials is 59.77 VHN, after being implanted for various of time or ions dose the hardness increased and reached optimum in order of 109.78 VHN or increase by factor 83%, while the wear rate decreased from 22.9×10 -9 mm 2 /kg to be minimum in order 2.5×10 -9 mm 2 /kg or decreased by factor 88%. This optimum condition was achieved at 60 minutes of implantation time or at 3.728×10 16 ions/cm 2 of ions dose. 2.…”

Section: Resultsmentioning

confidence: 99%

“…The samples were implanted by using 150 keV/2mA ion implanter. Implantation of the samples performed at dose 3.107×10 16 ion/cm 2 , 3.148×10 16 ion/cm 2 , 3.728×10 16 ion/cm 2 , 4.039×10 16 ion/cm 2 and 4.35×10 16 ion/cm 2 at 60 keV of ions energy. The increase of the temperature of the samples was ensured solely by the incoming ion beam without any additional heating.…”

Section: Methodsmentioning

confidence: 99%

“…It concluded that the hardness and wear rate of samples improved after nitrogen ion implantation and extend of improvement increases with the dose. The maximum hardness is appearing at a nitrogen ion dose of 3.728×10 16 ion/cm 2 . In this condition, the hardness increase from 59.77 VHN (raw material) to 109.78 VHN (83% higher), while the wear rate decreases from dose 3.107×10 16 ion/cm 2 to 3.728×10 16 ion/cm 2 or reduce by a factor 88%.…”

Section: Analysis Of the Hardness And Wear Ratementioning

confidence: 99%

“…The amount of crystallographic damage can be enough to cause the partial amorphization of the metal surface, depending on the dose, energy, temperature (governing self-annealing that can occur to repair some or all of the damage as it is generated) and ion species (heavy ions displace a greater volume of target atoms per ion) [15]. Finally, the implantation of a high dose of ions induces significant compressive stress that can contribute to the blocking of the fissures and close the channels of corrosion [16].…”

Section: Introductionmentioning

confidence: 99%

“…A Crystallography Open Database (COD), entry number 96-411-3942 code show that the phase is α Fe (alpha-iron). The XRD pattern for implanted material with nitrogen ions at 3.728×1016 ion/cm 2 of ions dose is shown inFigure 4. A COD, entry number 96-411-3942 code show that the phases are 54.5% of Fe 3 N and 45.5% of Fe 2 N.…”

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confidence: 99%

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Influence of Nitrogen Ion Implantation on the Disc Brake Material of Motor Vehicles Component

Pribadi¹,

Mulyani²,

Sujitno³

2019

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Weaknesses of local disc brakes are cover several conditions such as low hardness, wear, and corrosion resistance. To improve this weakness, it is necessary to modify the surface properties of the material. The aim of this research is to study the influences of nitrogen ion implantation on the surface properties of a disc brake material. The implantation process was carried out for various of ions dose such as 3.107×10 16 ions/cm 2 , 3.148×10 16 ions/cm 2 , 3.728×10 16 ions/cm 2 , 4.039×10 16 ions/cm 2 , 4.350×10 16 ions/cm 2 at a certain energy and beam current of 60×10 16 ions/cm 2 , 30 µA respectively. Hardness and wear properties were tested using microhardness tester and wear testing machine, respectively. Meanwhile, the crystalline structure for un-implanted (raw) and implanted materials at the optimum dose was analyzed using XRD. From the hardness test results, it can be obtained that the hardness of raw material is 59.82 VHN and after implantation it reached the highest value of 109.78 VHN or increases by factor 83%, while the wear test results is 22.9×10-9 mm 2 /kg for raw material and after implantation it reaches the highest value of 2.5×10-9 cm 2 /kg or decreases by factor 88%. These conditions were obtained at 3.728×10 16 ions/cm 2 of dose. Based on the XRD analysis, 45.5% Fe 2 N and 54.55% Fe 3 N compounds are formed.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Analysis Of the Hardness And Wear Ratementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Influence of Nitrogen Ion Implantation on the Disc Brake Material of Motor Vehicles Component

Pribadi¹,

Mulyani²,

Sujitno³

2019

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Recent advances in Fe-based bioresorbable stents: Materials design and biosafety

Zhang,

Roux,

Rouchaud

et al. 2024

Bioactive Materials

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Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Das

Basak

2021

ACS Appl. Electron. Mater.

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Unlike the majority of the silicon-based electronic devices, optoelectronic devices are predominantly made using III–V and II–VI semiconductor compounds and their alloys because of their direct bandgap. Among these, zinc oxide (ZnO) is a multifunctional wide bandgap II–VI semiconductor material that has distinctive properties, such as large excitonic binding energy, high-sensitivity, nontoxicity, and good compatibility, which favors it to be considered for various optoelectronic applications including photoelectrochemical (PEC) water splitting, light-emitting diodes (LEDs), photovoltaics, and photodetectors. Though the research concentrated on ZnO started many decades ago, the renewed interest is rekindled only with the availability of high-quality single-crystal substrates, easy growth techniques of various nanostructures, and reports on p-type ZnO. Therefore, ZnO is being treated as a concentrated research focus during the last two decades by researchers encompassing a vast field starting from luminescent materials, energy storage and conversion, to biomedical sensors, and so on. Ion beam irradiation is a fruitful approach to modify the properties of semiconducting oxides by introducing not only impurities but also defects, strains, structural transitions, and others. The necessity of a timely in-depth and critical review of the progress on ion implantation in ZnO is the origin of this Review, which focuses on the recent implantation efforts in nanostructured ZnO thin films as well as single crystals. In the beginning, with an introduction to the general principles of ion implantation, this Review presents interactions and distribution of implantation-induced defects in ZnO. Next, comprehensive analyses on the influence of ion implantation on the optical, electrical properties, and optoelectronic applications including PEC water splitting and LEDs have been revealed. Most importantly, in each section from a “state-of-the-art” of the domain, some critical connections have been provided between the results of the theoretical simulations of the implanted ion-induced defects and the reported data, which in particular would be able to offer significant insights for both theoretical and experimental research community working with the oxide semiconductors. At the end, a summary with future directions for utilizing ion implantation for achieving ZnO thin-film-based high-performance devices has been presented. By including a sufficient breadth and depth of literature coverage in this Review, we believe that it would also tend to reveal the inconsistencies in the extant body of research.

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Ion Implantation

Cited by 6 publications

References 16 publications

Influence of Nitrogen Ion Implantation on the Disc Brake Material of Motor Vehicles Component

Influence of Nitrogen Ion Implantation on the Disc Brake Material of Motor Vehicles Component

Recent advances in Fe-based bioresorbable stents: Materials design and biosafety

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

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