Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance

Suvarna, Puneet; Bulmer, John; Leathersich, Jeffrey M.; Marini, Jonathan; Mahaboob, Isra; Hennessy, John; Bell, L. D.; Nikzad, Shouleh

doi:10.1109/lpt.2014.2382611

Cited by 14 publications

(10 citation statements)

References 10 publications

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“…This reduced field prevents premature breakdown at the contact edges. We have shown a large reduction in dark current and voltage-induced damage using this method ( Figure 14 ) [ 51 ]. Innovative passivation methods using other materials can be explored to further reduce dark current in our APD devices.…”

Section: Resultsmentioning

confidence: 99%

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Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Nikzad

Hoenk

Jewell

et al. 2016

Sensors

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Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

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Section: Resultsmentioning

confidence: 99%

“…Dark current and irreversible damage present in the unimplanted sample are reduced or eliminated by the implantation. First published in IEEE Photonic Technology Letters [ 51 ].…”

Section: Figurementioning

confidence: 99%

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Nikzad

Hoenk

Jewell

et al. 2016

Sensors

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“…The gallium nitride (GaN)-based material system and its ternary and quaternary alloys with aluminum (Al) and indium (In) are widely employed in light emitting diodes (LEDs), photodetectors [1][2][3] , and the next generation of power devices [4][5][6][7] . Due to the lack of inversion symmetry within the III-Nitride wurtzite crystal structure the material exhibits a spontaneous polarization charge along the c-direction.…”

Section: We Report On the Enhanced Incorporation Efficiency Of Magnesmentioning

confidence: 99%

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

Rocco

Licata

Mahaboob

et al. 2020

Sci Rep

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We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template layers. Total magnesium concentration in planar regions surrounding a hillock structure is comparable to that within hillock sidewall facets measured at 1.3 × 1019 cm−3 by atom probe tomography, and clustering of Mg atoms is seen in all regions of the film. Within individual hillock structures a decreased Mg cluster density is observed within hillock structures as opposed to the planar regions surrounding a hillock. Additionally, the Mg cluster radius is decreased within the hillock sidewall. The favorable incorporation of Mg is attributed to Mg dopants incorporating substitutionally for Ga during growth of semi-polar facets of the hillock structures. Enhanced p-type conductivity of GaN:Mg films grown on high hillock density template layers is verified by optical and electrical measurement.

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“…Over the last three decades, a tremendous amount of research has been conducted in the development of the III-nitride (III-N) material system and device technology. [1][2][3][4][5][6][7][8][9][10][11][12][13] III-N-based AlGaN/GaN high electron mobility transistors (HEMTs) have been extensively studied for biochemical sensing applications due to their high sensitivity to surface phenomena, fast response time, aqueous stability, and good biocompatibility. [14][15][16][17] In HEMT sensors, the two-dimensional electron gas (2DEG) acts as a highly conductive channel that can be modulated by changes in the surface potential.…”

Section: Introductionmentioning

confidence: 99%

Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor

Mahaboob

Reinertsen

Hogan

et al. 2020

Exp Biol Med (Maywood)

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The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe was used with this device to detect the presence of micromolar levels of hydrogen peroxide typically associated with intracellular processes. The real-time electrical response of the high electron mobility transistor sensor showed a gradual decrease in the two-dimensional electron gas current as the reaction proceeded over time. A corresponding increase in the emission intensity was measured from the fluorescent probe with the progression of the reaction. The fluorescence from the boronate probe was used as an indicator to confirm the detection of hydrogen peroxide. These results demonstrate the dynamic measurement capability of AlGaN/GaN high electron mobility transistor sensors in monitoring real-time reactions of reactive oxygen species such as hydrogen peroxide.

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Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance

Cited by 14 publications

References 10 publications

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor

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