Ion implantation effects in silicon carbide

McHargue, C.J.; Williams, J.M.

doi:10.1016/0168-583x(93)90703-9

Cited by 183 publications

(64 citation statements)

References 15 publications

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Section: Annealing Of Radiation Damagementioning

confidence: 99%

“…Above 1450°C, McHargue et al [147] reported that an "explosive" epitaxial growth takes place. TEM showed that the regrown layer has stacking faults and defect clusters which can largely be removed by second annealing at 1500°C [147]. Isochronal (10 h) and RBS-channelling studies on a single sample from 960°C up to 1600°C by Friedland et al [102] only found full epitaxial regrowth from the 6H-SiC bulk at the latter temperature and not at 1500°C.…”

Section: Annealing Of Radiation Damagementioning

confidence: 99%

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Diffusion of fission products and radiation damage in SiC

Malherbe

2013

J. Phys. D: Appl. Phys.

109

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A major problem with most of the present nuclear reactors is their safety in terms of the release of radioactivity into the environment during accidents. In some of the future nuclear reactor designs, i.e. Generation IV reactors, the fuel is in the form of coated spherical particles, i.e. TRISO (acronym for Triple Coated Isotropic) particles. The main function of these coating layers is to act as diffusion barriers for radioactive fission products, thereby keeping these fission products within the fuel particles, even under accident conditions. The most important coating layer is composed of polycrystalline 3C-SiC. This paper reviews the diffusion of the important fission products (silver, caesium, iodine and strontium) in SiC. Because radiation damage can induce and enhance diffusion, the paper also briefly reviews damage created by energetic neutrons and ions at elevated temperatures, i.e. the temperatures at which the modern reactors will operate, and the annealing of the damage. The interaction between SiC and some fission products (such as Pd and I) is also briefly discussed. As shown, one of the key advantages of SiC is its radiation hardness at elevated temperatures, i.e. SiC is not amorphized by neutron or bombardment at substrate temperatures above 350°C. Based on the diffusion coefficients of the fission products considered, the review shows that at the normal operating temperatures of these new reactors (i.e. less than 950°C) the SiC coating layer is a good diffusion barrier for these fission products. However, at higher temperatures the design of the coated particles needs to be adapted, possibly by adding a thin layer of ZrC.

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Section: Annealing Of Radiation Damagementioning

confidence: 99%

Section: Annealing Of Radiation Damagementioning

confidence: 99%

Diffusion of fission products and radiation damage in SiC

Malherbe

2013

J. Phys. D: Appl. Phys.

109

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“…Recrystallization of amorphized SiC requires very high temperature anneals, of the order of 1500°C. [5][6][7] To avoid this problem, the use of ion-beam induced epitaxial crystallization ͑IBIEC͒ has been recently studied. 8 Heera et al have reported the recrystallization of 6H-SiC wafers amorphized by Ge ϩ ion implantation by the use of Si ϩ ion implantation at temperatures as low as 480°C.…”

Section: Introductionmentioning

confidence: 99%

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Serre

Calvo‐Barrio

Pérez-Rodrı́guez

et al. 1996

Journal of Applied Physics

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The analysis of SiC films obtained by carbon ion implantation into amorphous Si ͑preamorphized by Ge ion implantation͒ has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x-ray photoelectron spectroscopy ͑XPS͒. The data obtained show the formation of an amorphous Si 1Ϫx C x layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si-C bonds in addition to the Si-Si and C-C ones in the implanted region, with a composition in the range 0.35 Ͻ x Ͻ 0.6. This points out the existence of a partial chemical order in the layer, in between the cases of perfect mixing and complete chemical order. Recrystallization of the layers has been achieved by ion-beam induced epitaxial crystallization ͑IBIEC͒, which gives rise to a nanocrystalline SiC layer. However, recrystallization is not complete, observing still the presence of Si-Si and C-C bonds in an amorphous phase. Moreover, the distribution of the different bonds in the IBIEC processed samples is similar to that from the as-implanted ones. This suggests that during IBIEC homopolar bonds are not broken, and only regions with dominant Si-C heteropolar bonds recrystallize.

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“…Amorphization is accompanied by swelling [4]. The prevailing view is that ease of amorphization of ceramics increases with increasing covalency of bonding and that silicon nitride should te easily amorphized too.…”

Section: Technical Report Introductionmentioning

confidence: 99%

“…Thus, fundamentals are not its well understood for silicon nitride. Silicon carbide is amorphized by small doses under ion implantation, and the hardness and modulus of the affected surface layer decrease [4].…”

Section: Technical Report Introductionmentioning

confidence: 99%

Ion implantation effects in silicon carbide

Cited by 183 publications

References 15 publications

Diffusion of fission products and radiation damage in SiC

Diffusion of fission products and radiation damage in SiC

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Performance improvement of silicon nitride ball bearings by ion implantation. CRADA final report

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