Ion implantation for in-situ quantitative ion microprobe analysis

Leta, D. P.; Morrison, George H.

doi:10.1021/ac50052a015

Cited by 100 publications

(38 citation statements)

References 9 publications

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“…The method also was described by Leta and Morrison in 1980. 47 Finally, the pioneering work of Wilson 48,49 has contributed, to a great extent, to the worldwide use of this implantation technique. Wilson et al persevered in the production of implants of known fluence for the majority of the elements in metal, semiconductor and insulator matrices, thus enabling the SIMS community to make fast quantitative analyses of most elements in these types of matrices.…”

Section: Standards For Quantification: the Implantation Standard Methodmentioning

confidence: 99%

SIMS: from research to production control

Werner

2003

Surface & Interface Analysis

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In 1958, when I joined the Philips Research Laboratories, there were a number of technological problems related to the analysis of solids within Philips that needed analytical support. Because the available (bulk) techniques did not give sufficient results, a new technique, later called secondary ion mass spectrometry (SIMS), was launched that involved the bombardment of a solid target with (primary) energetic ions, followed by mass analysis and ion detection of the sputtered (secondary) target ions.The restrictions of the available infrastructure for such an analytical technique were many: there was no PC for data handling, no internet or database for literature search, the photocopying machine was not yet invented, communication with other scientists had to be done by mail (there was no fax, no E-mail, no mobile phones) and, what was worse, SIMS was not considered to be a useful analytical technique compared with established techniques! In the years that followed there were many advances:(1) The SIMS instrumentation was improved by better ion optics, advanced electronic equipment and was extended from sector type to quadrupole and finally to time-of-flight (TOF) mass spectrometers. (2) The methodology of SIMS was developed step by step (parameters such as lateral and depth resolution, detection limit and quantitative analysis were all optimized in turn). (3) The SIMS technique then made its entrance to solve problems in technology development.In the last two decades SIMS has become an indispensable, reliable, quantitative analytical technique for production control in integrated circuit technology and the after-sales care of integrated circuits. The philosophy of the provision of an analytical service at the Philips Research Laboratory (hereinafter referred to as 'our laboratory') is discussed. After the initial period, where every method (SIMS, AES, ESCA, RBS, etc.) was claimed to be 'the only one' (the panacea), we learned how to organize analytical service cost efficiently and for the optimum benefit of the 'customer'. The core analytical techniques were concentrated in one department and the customer would profit from synergy by using several appropriate analytical techniques for the same problem.Today, the latest developments in SIMS instrumentation keep pace with the latest challenges of the ultra-large-scale integration (ULSI) roadmap for integrated circuits, which indicates the dimensions of the circuits that are predicted for the years to come.

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Section: Standards For Quantification: the Implantation Standard Methodmentioning

confidence: 99%

SIMS: from research to production control

Werner

2003

Surface & Interface Analysis

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“…Fe for Zn) on ion yields. Fortunately, this problem was successfully addressed by Chryssoulis et al (1986) using ion implantation (after Leta and Morrison, 1980) to determine silver in sphalerite. An interesting development that arose from the investigations of the trace silver content of major sulphide minerals at Brunswick Mining and Smelting Corporation Limited concerned the different results from electron microprobe analyses done on ore mined in 1977 and that mined in 1985.…”

Section: Microbeam Techniquesmentioning

confidence: 99%

The distribution of trace precious metals in minerals and mineral products

Cabri¹

1992

Mineral. mag.

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DATA on the distribution of the precious metals (Au, Ag and the platinum=group elements Ru, Rh, Pd, Os, Ir, Pt) are rapidly accumulating as a consequence of the application of microbeam analytical techniques such as the electron microprobe, the proton microprobe, and the ion microprobe. The new data obtained with these techniques build on knowledge accumulated over the last 140 years using bulk analytical methods (e.g. spectrographic). The nature of the occurrence, the concentrations, and the variation in amount s of precious metals in minerals and mineral products are reviewed with comments as to the significance of the results with respect to industrial and environmental concerns. Future directions in mineral-specific analysis of trace precious-metal concentrations and applications outside of process mineralogy are discussed.

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“…One of the authors (SN) has prepared synthetic sapphire standards for the analyses reported in this article, by ion implantation. Widely used in the semiconductor industry, this technique can place a broad variety of elements into sapphire with a concentration accuracy of a few percent or better (Leta and Morrison, 1980). Thus, we can achieve an overall measurement accuracy of better than 25%-an impressive level when one considers that we are trying to measure only 5 to 50 atoms out of a million.…”

Section: Introductionmentioning

confidence: 99%

Beryllium Diffusion of Ruby and Sapphire

Emmett¹,

Scarratt²,

McClure³

et al. 2003

Gems & Gemology

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Over the past two years, the heat treatment of corundum involving lattice diffusion of beryllium (Be) at temperatures over 1800°C has become a major issue in the gem trade. Although initially only orange to orangy pink ("padparadscha"-like) sapphires were seen, it is now known that a full range of corundum colors, including yellow and blue as well as ruby, have been produced or altered by this treatment. An extension of the current understanding of the causes of color in corundum is presented to help explain the color modifications induced by Be diffusion. Empirical support is provided by Bediffusion experiments conducted on corundum from various geographic sources. Examination of hundreds of rough and faceted Be-diffused sapphires revealed that standard gemological testing will identify many of these treated corundums, although in some instances costly chemical analysis by mass spectrometry is required. Potential new methods are being investigated to provide additional identification aids, as major laboratories develop special nomenclature for describing this treatment.

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Ion implantation for in-situ quantitative ion microprobe analysis

Cited by 100 publications

References 9 publications

SIMS: from research to production control

SIMS: from research to production control

The distribution of trace precious metals in minerals and mineral products

Beryllium Diffusion of Ruby and Sapphire

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