Ion-Implantation-Induced Disorder in FePt-C Thin Films

Kumar, Dheeraj; Gupta, Surbhi; Tham, Kim Kong; Nongjai, Razia; Saito, Shin; Asokan, K.; Piramanayagam, S. N.

doi:10.1109/tmag.2018.2867912

Cited by 4 publications

(3 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ion implantation (or irradiation) is a powerful technique for local modification of structural and magnetic properties of an FM material through resist masks or focused ion beams [215][216][217][218][219] (figure 11 (a)). Thus, this is a potential technique for creating pinning sites for DWM devices by locally modifying the magnetic properties [220].…”

Section: Ion Implantationmentioning

confidence: 99%

Domain wall memory: Physics, materials, and devices

et al. 2022

View full text Add to dashboard Cite

Section: Ion Implantationmentioning

confidence: 99%

Domain wall memory: Physics, materials, and devices

et al. 2022

View full text Add to dashboard Cite

“…Ion implantation is a powerful technique for local modification of structural and magnetic properties of a ferromagnetic material through movement of atoms in lateral direction and across the interface [57]. Recently, we observed that ion implantation of 14 N + and 40 Ar + decreases the anisotropy constant locally for masked Co 80 Pt 20 and Fe 50 Pt 50 magnetic thin films [58][59][60]. Thus, this is a potential technique for creating the pinning sites for the DW memory devices.…”

Section: B Ion Implantationmentioning

confidence: 99%

Domain Wall Motion Control for Racetrack Memory Applications

et al. 2019

Self Cite

View full text Add to dashboard Cite

Increasing demand for large capacity data storage can only be fulfilled by hard disk drives (HDDs) and to some extent, by solid-state drives (SSDs). However, HDDs are favorable in many applications, as they are approximately 5-10 times cheaper than SSDs. Attempts are being made to increase the capacity of HDDs by technologies such as heat-assisted magnetic recording (HAMR) and microwave assisted magnetic recording (MAMR). However, increasing the capacity has been a slow process and there are limitations in achieving areal density above 10 Tbpsi. Thus, introduction of new technologies is important for attaining high capacity. In this scenario, domain wall memory is a potential candidate, but there are still many unsolved issues. One of these is ensuring controlled and reliable motion of domain walls along the nanowire. In this paper, we provide an overview of existing technologies and our attempts to control domain wall motion. Many methods of fabricating pinning centers have been proposed and demonstrated. These methods can mainly be categorized as (a) geometrical and (b) non-geometrical methods. In the first part, we review geometrical approach to pin domain walls. Later, we provide an overview of our approaches to create pinning centers using non-geometrical means. Non-geometrical approach provides more advantages as it provides a variety of choices to tailor the properties. In particular, this approach suits scalability.

show abstract

“…Polenciuc et al utilized the concept of exchange bias for creating the pinning sites . Jin et al studied the concepts of nonmagnetic metal diffusion, ion-implantation of nonmagnetic B + ions, and the exchange coupling between in-plane and out-of-plane (OOP) magnetized FM wires to fabricate the synthetic pinning sites. ,− Despite the above successes in DW device research, the experimental realization of DW device-based NC is only at the primordial stage. Therefore, more methods to fabricate synthetic neurons and synapses need to be researched.…”

Section: Introductionmentioning

confidence: 99%

Diode Characteristics in Magnetic Domain Wall Devices via Geometrical Pinning for Neuromorphic Computing

Rahaman

Kumar

Chung

et al. 2023

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Neuromorphic computing (NC) is considered a potential vehicle for implementing energy-efficient artificial intelligence. To realize NC, several technologies are being investigated. Among them, the spin–orbit torque (SOT)-driven domain wall (DW) devices are one of the potential candidates. Researchers have proposed different device designs to achieve neurons and synapses, the building blocks of NC. However, the experimental realization of DW device-based NC is only at the primeval stage. Here, we have studied pine-tree DW devices, based on the Laplace pressure on the elastic DWs, for achieving synaptic functionalities and diode-like characteristics. We demonstrate an asymmetric pinning strength for DW motion in two opposite directions to show the potential of these devices as DW diodes. We have used micromagnetic simulations to understand the experimental findings and to estimate the Laplace pressure for various design parameters. The study provides a strategy to fabricate a multifunctional DW device, exhibiting synaptic properties and diode characteristics.

show abstract

Ion-Implantation-Induced Disorder in FePt-C Thin Films

Cited by 4 publications

References 35 publications

Domain wall memory: Physics, materials, and devices

Domain wall memory: Physics, materials, and devices

Domain Wall Motion Control for Racetrack Memory Applications

Diode Characteristics in Magnetic Domain Wall Devices via Geometrical Pinning for Neuromorphic Computing

Contact Info

Product

Resources

About