Ion implantation of magnetic thin films and nanostructures

All-Linear Multistate Magnetic Switching Induced by Electrical Current

“…Previous studies show that the exchange coupling was greatly weakened by ion implantations in many magnetic systems [22][23][24], which may be utilized to tune the ratio of D×A −1 to achieve a DMI dominant system. Following this guideline, we then fabricated Hall devices using thin films of Ta (3 nm)/Pt (3 nm)/Co (1 nm)/Ta (2 nm) on SiO2 substrate.…”

Focused Ion Beam as a Nanofabrication Tool for Rapid Prototyping of Nanomagnetic Devices

“…For comparison, with FIB, this shift could be reduced to an unnoticeable level. Finally, the FIB-based fabrication does not only have the advantage of using fewer steps than lithography-based processing but also has potential to pattern magnetic materials with better resolution than E-beam-based processing [7,8]. Probably, the main issue concerning the use of FIB is the potential modification of magnetic properties due to the Ga+ ion implantation into devices.…”

“…The lateral Ga+ ion implantation could limit the effective dimensions a magnetic device could be trimmed down to. This effect is explained by the creation of the magnetically "dead" layer in the ion-implanted regions [8]. To avoid the deterioration of magnetic properties, a multi-step FIB methodology has been developed.…”