Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts

Yu, Haijiang; McCarthy, L.; Rajan, Siddharth; Keller, S.; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

doi:10.1109/led.2005.846583

Cited by 93 publications

(27 citation statements)

References 7 publications

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“…[4][5][6][7][8][9]12 In contrast, the Al 0.51 Ga 0.49 N samples, shown in Fig. 3b, exhibit excellent activation efficiency for the samples implanted with the lower silicon doses.…”

Section: Methodsmentioning

confidence: 94%

“…Ion implantation with various ions, doses, and energies is used for the fabrication of the channel layer in transistors, creating highly conductive n-type regions for improving access resistance, and for device isolation. 8 The fabrication of many Al x Ga 1-x N/GaN devices already involves ion implantation and more often the focus has begun to shift to activation of an implanted species into Al x Ga 1-x N rather than GaN. 8 However, the studies of ion-implanted Al x Ga 1-x N are minimal with most of the work focusing on Al x Ga 1-x N with Al mole fractions less than 30%.…”

Section: Introductionmentioning

confidence: 99%

“…8 The fabrication of many Al x Ga 1-x N/GaN devices already involves ion implantation and more often the focus has begun to shift to activation of an implanted species into Al x Ga 1-x N rather than GaN. 8 However, the studies of ion-implanted Al x Ga 1-x N are minimal with most of the work focusing on Al x Ga 1-x N with Al mole fractions less than 30%. [9][10][11][12][13][14][15][16][17] The most comprehensive studies have been made by Ryu et al [5][6][7] who have had great success in implanting silicon with various doses into molecular beam epitaxy (MBE)-grown Al x Ga 1-x N with Al concentrations of 18% and 24%.…”

Section: Introductionmentioning

confidence: 99%

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Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction

Moore

Yeo

Ryu

et al. 2008

Journal of Elec Materi

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Electrical activation studies of Al x Ga 1-x N (x = 0.45 and 0.51) implanted with Si for n-type conductivity have been made as a function of ion dose and anneal temperature. Silicon ions were implanted at 200 keV with doses ranging from 1 9 10 14 cm -2 to 1 9 10 15 cm -2 at room temperature. The samples were subsequently annealed from 1150°C to 1350°C for 20 min in a nitrogen environment. Nearly 100% electrical activation efficiency was successfully obtained for the Si-implanted Al 0.45 Ga 0.55 N samples after annealing at 1350°C for doses of 1 9 10 14 cm -2 and 5 9 10 14 cm -2 and at 1200°C for a dose of 1 9 10 15 cm -2 , and for the Al 0.51 Ga 0.49 N implanted with silicon doses of 1 9 10 14 cm -2 and 5 9 10 14 cm -2 after annealing at 1300°C. The highest room-temperature mobility obtained was 61 cm 2 /V s and 55 cm 2 /V s for the low-dose implanted Al 0.45 Ga 0.55 N and Al 0.51 Ga 0.49 N, respectively, after annealing at 1350°C for 20 min. These results show unprecedented activation efficiencies for Al x Ga 1-x N with high Al mole fractions and provide suitable annealing conditions for Al x Ga 1-x N-based device applications.

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“…[4][5][6][7][8][9]12 In contrast, the Al 0.51 Ga 0.49 N samples, shown in Fig. 3b, exhibit excellent activation efficiency for the samples implanted with the lower silicon doses.…”

Section: Methodsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction

Moore

Yeo

Ryu

et al. 2008

Journal of Elec Materi

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“…One of the challenges of implementing these new AlGaN channel HEMTs is realizing low contact resistance. The two primary approaches have been through Si implantation [14] and selective growth of graded AlGaN [12], [15]- [18]. For the latter, low-damage etch processes are also needed [19].…”

Section: Introductionmentioning

confidence: 99%

Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors

Carey

Ren

Baca

et al. 2019

IEEE J. Electron Devices Soc.

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AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation. Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N (85/70) HEMTs were operated up to 500 • C in ambient causing only 58% reduction of dc current relative to 25 • C measurement. The low gate leakage current contributed to high gate voltage operation up to +10 V under V ds = 10 V, with I ON /I OFF ratios of > 2 × 10 11 and 3 × 10 6 at 25 and 500 • C, respectively. Gate-lag measurements at 100 kHz and 10% duty cycle were ideal and only slight loss of pulsed current at high gate voltages was observed. Low interfacial defects give rise to high quality pulsed characteristics and a low subthreshold swing value of 80 mV/dec at room temperature. Herein is an analysis of AlGaN-channel HEMTs and their potential future for high power and high temperature applications. INDEX TERMS AlGaN, GaN, high electron mobility transistor (HEMT), high temperature.

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“…However, in the last few years, the doping process by ion implantation has attracted increasing interest because of its ability to perform localized doping. This opens up new possibilities to design complex devices . Whereas the n‐doping process using Si implantation is well controlled , p‐doping, usually performed with Mg remains a challenge.…”

Section: Introductionmentioning

confidence: 99%

Capping stability of Mg-implanted GaN layers grown on silicon

Lardeau-Falcy

Coig

Charles

et al. 2016

Phys. Status Solidi A

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The morphological stability during activation annealing of Mg‐implanted GaN layers (2 μm thick) grown on Si (111) is studied for several protective layers and fluencies in the 1013–1015 at. cm−2 range. We show that a thin capping, composed of a few nanometer thick AlN and SiNx stacks grown in situ just after GaN deposition, provides a good solution to retain flat morphology and no strain cracking up to 1 h annealing at 1100 °C in N2. These results are compared to thicker protective stackings with AlN layers of Si3N4 or SiO2 deposited after the implantation that withstand a thermal budget of up to 1 h at 1200 °C in N2. The efficiency of these different cap layers to limit GaN damage during high‐temperature annealing is studied as well as the impact of Mg implantation process on the cap resilience. The quality of the GaN sublayer is studied by low‐temperature photoluminescence to analyze structural/optical defects and Mg related complexes. X‐ray diffraction is performed to evaluate residual strains at the different process stages.

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Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts

Cited by 93 publications

References 7 publications

Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction

Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction

Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors

Capping stability of Mg-implanted GaN layers grown on silicon

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Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts

Cited by 93 publications

References 7 publications

Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction

Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

Capping stability of Mg-implanted GaN layers grown on silicon

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Product

Resources

About

Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors