Ion-implanted buried layer in diamond as a source of ballistic phonons at liquid-helium temperatures

Scattering of acoustic phonons by embedded layers, extended defects and interfaces in diamond, silicon and II‐VI compounds

“…Nonequilibrium phonons are produced in the sample as a result of pulse excitation P. In the case of diamond, the buried implanted layer illuminated by the nitrogen laser (λ= 337 nm, τ P = 7.5 ns) was used as a phonon generator. As was shown in [1], this is an efficient procedure of nonequilibrium phonon generation. For the II-VI compounds and Si/SiGe nanostructures, laser excitation or metal-film heating was used for phonon generation.…”