Ion-implanted n-channel InP metal semiconductor field-effect transistor

Abstract

Device-quality n-type layers have been produced by ion implantation in Fe-doped semi-insulating InP. 29Si has been used as the dopant and anneals were carried out with the aid of a multiple-layered encapsulant consisting of plasma-deposited Si3N4 and pyrolytic P-doped SiO2. These layers have been used to make n-channel MESFET’s for which gains of 13.7 and 9.8 dB were measured at 8 and 10 GHz, respectively. The gate metallization for these devices was Au. Low-leakage currents and adequate gate breakdown characteristics were observed.

Ohmic Contact of Cadmium Oxide, a Transparent Conducting Oxide, to n-type Indium Phosphide

“…The optical band gap of the films, Table 1, is determined from optical absorption spectra. CdO is a direct band gap material; therefore the optical band gap can be determined from a plot (Rhν) 2 verses hν plot extrapolated to the ordinate intercept (where R is the optical absorption coefficient at energy hν). The values for the band gap are consistent with those found in the literature for equivalent carrier concentrations.…”

“…Devices fabricated from InP, such as field effect transistors, − heterojunction bipolar transistors, − and high electron mobility transistors, − require high-conductivity ohmic contacts. Additionally, photonic InP devices, such as solar cells − and light emmitting diodes, − would benefit from contacts that were optically transparent.…”