Ion-implanted Si pn-junction detectors with ultrathin windows

Maisch, Th.; Günzler, R.; Weiser, M.; Kalbitzer, S.; Welser, W.; Kemmer, J.

doi:10.1016/0168-9002(90)90457-h

Cited by 32 publications

(4 citation statements)

References 6 publications

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“…It does not contribute to the signal. In this PIN photodiode design, it is important to make the p-layer as shallow as possible [2] [3]. In order to achieve a shallow junction, the optimum conditions of ion implantation, such as the thickness of the SiO 2 oxide barrier, the tilting angle of the wafer with respect to the incident ion beam, and the annealing conditions, have been determined by using the results of simulation.…”

Section: B Design Of Pin Photodiodementioning

confidence: 99%

Design and Evaluation of a 2D Array PIN Photodiode Bump Bonded to Readout IC for the Low Energy X-ray Detector

Yuk

Park

2006

2006 International Conference of the IEEE Engineering in Medicine and Biology Society

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A 2D array radiation sensor, consisting of an array of PIN photodiodes bump bonded to readout integrated circuit (IC), has been developed for operation with low energy X-rays. The PIN photodiode array and readout IC for this system have been fabricated. The main performance measurements are the following: a few pA-scale leakage current, 350 pF junction capacitance, 30 microm-depth depletion layer and a 250 microm intrinsic layer at zero bias. This PIN photodiode array and readout IC were fabricated using a PIN photodiode process and standard 0.35 microm CMOS technology, respectively. The readout circuit is operated from a 3.3 V single power supply. Finally, a 2D array radiation sensor has been developed using bump bonding between the PIN photodiode and the readout electronics.

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Section: B Design Of Pin Photodiodementioning

confidence: 99%

Design and Evaluation of a 2D Array PIN Photodiode Bump Bonded to Readout IC for the Low Energy X-ray Detector

Yuk

Park

2006

2006 International Conference of the IEEE Engineering in Medicine and Biology Society

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“…The actual dead layer thickness was determined by two different methods: Maisch et.al. [11] have measured the detector window as a function of the annealing state by using the technique of tilting the detector surface with respect to an incident a-particle beam. The resulting energy losses of a monoenergetic particle beam have been measured with standard high -resolution nuclear spectrometric techniques.…”

Section: Entrance Window and Quantum Detection Efficiencymentioning

confidence: 99%

Characterisation Of Fully Depleted Pn-CCD's For X-Ray Imaging

Sterzik

Bräuninger

Predehl

et al. 1989

EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy and Atomic Physics

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The second fabrication of fully depletable, backside illuminatable pn CCD's on high resistivity 280µm thick silicon (e ti 2.5 kSlcm) has been tested. Two dimensional X -ray imaging was performed; the multilinear arrangement of the pixel -rows (pixel size 100 x 54µm2) allows a fast readout of the entire detector. We present results of measurements concerning the static device characteristics (leakage currents) and their temperature dependance. Their contributions to the detector noise are calculated. Entrance window thicknesses for this kind of devices have been measured in two different ways. Quantum detection efficiencies in the energy range from 100eV to 10keV are derived and compared to first results obtained with synchrotron radiation in the spectral range between 500eV and 1900eV. An improved design using epitactical silicon with a more suitable geometry and an on -chip JFET electronics has been developed and is currently being fabricated. Further developed devices of this kind are proposed as focal plane instruments for one EPIC (European X -ray Photon Imaging Counter) on the XMM (X -ray Multi Mirror) mission.

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“…The 12.5 keV Boron backside implantation used in our devices was analysed by the MPI for Nuclear Physics in Heidelberg [14]. The physical reason is that practically independant of the implantation parameters (within reasonable boundaries) the loss of signal charges is almost due to recombination in the undepleted region.…”

Section: The Radiation Entrance Windowmentioning

confidence: 99%

PN-CDDs for the XMM satellite mission

et al. 1990

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The High Throughput X-ray Spectroscopy Multi Mirror Mission (XMM) is one of four 'Cornerstone' projects in the ESA long-term programme HORIZON 2000 for space science. The satellite observatory consists of a high throughput facility for X-ray spectroscopy coupled to dispersive and non-dispersive imaging spectrometers. One out of three independent telescopes of the XMM satellite [1] will be equipped with a new type of X-ray CCD: a radiation hard junction CCD with a sensitive thickness of 280,um and a pixel size of 150x 15Ojm2 corresponding to 3.7 arcsec thus well adapted to the designed angular resolution of 30 arcsec (HEW) of the threeWoltertype telescopes.The pn-junction CCD was furthermore designed for good timing performance in order to precisely measure the fastest transient phenomena of astrophysical objects, i.e. several tens of microseconds. This is achieved by a multi-linear CCD architecture having only a parallel transfer with the respective number of readout nodes. The multiplexing is done only after the complete signal processing when perturbations cannot degrade the signal quality any more.With devices fabricated at the end of last year we have measured an improved charge transfer efficiency per pixel of 0.9995 and an energy resolution of the CCD output stage of 5 e (rms). The parameters of the tested devices have already been close to the desired XMM specifications. The devices have not yet been tested as a complete system. 404 / SPIE Vol. 1344 EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy (1990) Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/25/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Ion-implanted Si pn-junction detectors with ultrathin windows

Cited by 32 publications

References 6 publications

Design and Evaluation of a 2D Array PIN Photodiode Bump Bonded to Readout IC for the Low Energy X-ray Detector

Design and Evaluation of a 2D Array PIN Photodiode Bump Bonded to Readout IC for the Low Energy X-ray Detector

Characterisation Of Fully Depleted Pn-CCD's For X-Ray Imaging

PN-CDDs for the XMM satellite mission

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