Ion Implanters

Recent progresses on ion beam irradiation induced structure and performance modulation of two-dimensional materials

“…Owing to the merits of being versatile, localizable, with a large degree of freedom of the adjusted parameters, not limited to the type of doping materials, and free of contamination and chemical reactions, ion irradiation is regarded as one of the most efficient doping methods in the semiconductor industry. 130 For the doping of bulk materials, relatively high ion energies above several keV are required, which increase with the doping depth of the target elements. 131–133 Alternatively, for 2D materials, much lower energies are usually adopted to avoid side effects from the irradiation phenomena.…”