Ion‐induced damage evaluation with Ar cluster ion beams

Abstract

dIon-induced damage on organic materials has been evaluated with secondary ion mass spectrometry. However, conventional sputtering beams such as SF 5 + and C 60 + cannot etch organic materials without inducing damage, and evaluating the damage depth distribution in these materials is difficult. Large gas cluster ions can etch organic materials without damage, and in this study, the damaged layer thickness was evaluated by molecular depth profiling with Ar cluster ion beam. The characteristic molecular ions were not detected in the spectra after etching with Ar monomer beam, indicating that the chemical structures of phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) were seriously damaged. The intensity of the fullerene molecular ion reached a peak at the depth of about 35 nm. For PS, the peak intensity of m/z 91 increased with sputtering depth and saturated at about 45 nm. These values agreed with the projection range of Ar + in PCBM and PS, respectively. These results indicate that the ion-induced damage depth was the same as the projection range of its ion.

Argon cluster cleaning of Ga+ FIB‐milled sections of organic and hybrid materials

“…The easier removal of Ar may be offset by greater cross‐linking in the polyimide. Similar measurements are reported by Yamamoto et al for the damage caused by 1 ion/nm 2 of 10 keV normally incident Ar + implanted into PS. They find that there is a surface damaged layer of ~30 nm with a sputtering yield that is 0.23 of the value for undamaged PS.…”

Molecular aggregation states and wetting behavior of a poly{2-(perfluorooctyl)ethyl acrylate} brush-immobilized nano-imprinted surface

“…The XPS depth profiles were obtained with a PHI 5000 VersaProbe equipped with an Ar gas cluster ion beam (GCIB) gun [27,28]. The Ar GCIB gun was operated at 5 kV accelerating voltage and 20 nA beam current with the mean cluster size around 2500 Ar atoms/cluster.…”

Observation of constraint surface dynamics of polystyrene thin films by functionalization of a silsesquioxane cage

“…To determine the surface tension, , the contact angles, , of four from the 1-alkyl-3-methylimidazolium bis(trifluoromethylsulfonyl)amide [C n mim][Ntf 2 ] (n = 2, 4, 6, 10) ionic liquids were measured on thin films of PS25k, PS40k, PS-POSS25k, and PS-POSS40k at 413 K and PS2.3k and PS-POSS2.3k at 393 K.  was determined by linear extrapolation of the surface tension data of the ionic liquids [24] to cos= 1. The measured values of T g , , and  are summarized in Tables 2 and 3. X-ray photoelectron spectroscopy (XPS) depth profiles (PHI 5000 VersaProbe, ULVAC-PHI) were obtained with an Ar gas cluster ion beam gun (GCIB) with a monochromatic Al-K X-ray source (1486.6 eV) [25] [26]. The Ar GCIB gun was operated at a 2.5 kV accelerating voltage and a 5 nA beam current.…”