Ion-induced electron emission monitoring of the structure and morphology evolution in HOPG

Effects of the deep ion-induced modification of highly oriented pyrolytic graphite

“…The average level of radia tion damage 〈ν〉 corresponding to the normal (θ = 0) incidence of ions with an energy of 15 keV can there fore also be obtained at higher energies (e.g., at 30 keV) by increasing angle of incidence θ. The effect the angle of incidence of argon ions with an energy of 30 keV has on the modification of an HOPG surface layer was studied in [20]. The γ(Т) dependence monitored as the angle of incidence was increased showed that the total electron yield was enhanced, the γ(Т) dependence began to decline as the irradiation temperature was raised, and the peak at the texture transition temperature flattened until it was no longer observed at θ ≥ 40°.…”

Relief evolution of HOPG under high-fluence 30keV argon ion irradiation

“…Its mosaic structure is characterized by axis texture in the [0 0 1] direction normal to the plate surface; disorientation of the basal planes does not exceed 50 0 . The pronounced effect of temperature on ion-induced structural, emission, and morphological changes different from the respective ones for polycrystalline graphites is observed for HOPG upon high-fluence ion irradiation with Ar + and N 2 + ions with energies of tens of keV [3,4,[13][14][15][16][17][18]. In particular, it has been found that the sputtering yield is practically twofold lower upon sputtering of the basal plane of UPV-1T with 30-keV Ar + ions in comparison with Y values upon the sputtering of polycrystalline graphites in a wide range of ion incidence angles [17].…”