Nanoscale
fabrication and characterization techniques critically
underpin a vast range of fields, including nanoelectronics and nanobiotechnology.
Focused ion beam (FIB) techniques are appealing due to their high
spatial resolution and widespread use for processing of nanostructured
materials. Here, we introduce FIB-induced fluorescence spectroscopy
(FIB-FS) as a nanoscale technique for spectroscopic detection of atoms
sputtered by an ion beam. We use semiconductor heterostructures to
demonstrate nanoscale lateral and depth resolution and show that it
is limited by ion-induced intermixing of nanostructured materials.
Sensitivity is demonstrated qualitatively by depth profiling of 3.5,
5, and 8 nm quantum wells and quantitatively by detection of trace-level
impurities present at parts-per-million levels. The utility of the
FIB-FS technique is demonstrated by characterization of quantum wells
and Li-ion batteries. Our work introduces FIB-FS as a high-resolution,
high-sensitivity, 3D analysis and tomography technique that combines
the versatility of FIB nanofabrication techniques with the power of
diffraction-unlimited fluorescence spectroscopy.