Ion-Induced Surface and Bulk Displacement Threshold for Epitaxial Growth

Q., Z.; Zheng, Y.F.; Liu, B. X.

doi:10.1002/(sici)1521-396x(199810)169:2<239::aid-pssa239>3.0.co;2-f

Cited by 21 publications

(20 citation statements)

References 21 publications

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“…As discussed earlier, the most likely ions, which will dominate the surface bombardment under the ETP conditions with ERFSB, are SiH n + ions. The sputter and displacement yield for both ions will be roughly the same since the ion mass does not differ too much ͑28-31 amu compared to 40 amu͒, 19 which validates the use of the data based on the Ar + ion. Note that the ion-film interaction diagram reflects the yield of the ion-film interactions under deposition conditions; however, it does not provide information of the penetration depth of the ion-bulk interactions in to the bulk of the film.…”

Section: -8supporting

confidence: 66%

“…The threshold energy for surface Si displacement is roughly 18 eV, whereas the threshold energy for the more bonded bulk Si is higher, i.e., roughly 40 eV. 19 At even higher ion energies the atoms can be sputtered away. The threshold energy for Si sputtering is roughly 50 eV and the sputter yield increases drastically with increasing ion energy.…”

Section: -8mentioning

confidence: 99%

“…Furthermore, the results are discussed in terms of general growth process indicators such as removing excess H, removing weaker bonds, removing structural defects, and etching. Despite the fact that many ion-surface interactions on the Si network and its surface have been thoroughly studied, such as the ion-induced displacement of surface Si atoms and bulk Si atoms 18,19 or Si sputtering, 20 these well known ion-surface interactions are barely mentioned in the literature on Si:H growth studies.…”

Section: Introductionmentioning

confidence: 99%

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The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition

Smets

Kessels

Sanden

2007

Journal of Applied Physics

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The ion-bombardment induced surface and bulk processes during hydrogenated amorphous silicon (a-Si:H) deposition have been studied by employing an external rf substrate bias (ERFSB) in a remote Ar–H2–SiH4 expanding thermal plasma (ETP). The comparison of the ETP chemical vapor deposition without and with ERFSB enables us to identify some important ion-surface and ion-bulk interactions responsible for film property modifications. Employing ERFSB creates an additional growth flux and the low energetic ions deliver an extra 5–10eV per Si atom deposited at typical deposition rates of 10–42Å∕s which is a sufficient ion dose to modify the film growth. It is demonstrated that the extra surface and bulk process during a-Si:H growth, induced by the additional ion bombardment, provide an extra degree of freedom to manipulate the a-Si:H microstructure. An ion-film interaction diagram is introduced, which is used to discriminate ion-surface interactions from ion-bulk interactions. According to this ion-film interaction diagram, the a-Si:H grown with ERFSB can be roughly classified in three phases. In phase I the only ion-surface process activated is Si surface atom displacement. In phase II also ion-induced Si bulk atom displacement is sufficiently activated, whereas in phase III ion-induced Si atom sputtering is significant. Phase I is characterized by a reduction in the nanosized void density, a reduction in defect density, and an improvement of the photoresponse. We find that the Si surface displacement is the process responsible for various improvements of the material properties via the enhanced surface migration. Phase II is characterized by an enhancement of vacancy incorporation. In accordance with the introduced ion-film interaction diagram, the Si atom bulk displacement process is responsible for the incorporation of additional vacancies. Phase III is characterized by the decrease in growth flux and the increase in void density. The significant contribution of ion-sputtering processes is responsible for the effects observed in phase III.

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Section: -8supporting

confidence: 66%

Section: -8mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition

Smets

Kessels

Sanden

2007

Journal of Applied Physics

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“…The threshold energy for surface atom displacement of a Si surface atom exposed to an Ar ion beam ͑which has a mass close to that of an SiH 3 + ion, thus we expect a similar energy transfer͒ has been estimated to be around 18 eV, and the threshold energy for bulk atom displacement around 40 eV. 32 Bulk atom displacement has been…”

Section: B Materials Analysismentioning

confidence: 85%

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

Wank

Swaaij

Kudlacek

et al. 2010

Journal of Applied Physics

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We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ∼200 °C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for deposition on conductive substrates and for deposition of conductive materials on nonconductive substrates. Presence of negative ions/particles in the Ar–H2–SiH4 plasma is deduced from a voltage offset during biasing. Densification of the material at low Urbach energies is observed at a deposited energy <4.8 eV/Si atom and attributed to an increase in surface mobility of mobile species as well as well as surface atom displacement. The subsequent increase in Urbach energy >4.8 eV/Si atom is attributed to bulk atom displacement in subsurface layers. We make the unique experimental abservation of a decreasing Tauc band gap at increasing total hydrogen concentration—this allows to directly relate the band gap of amorphous silicon to the presence of nanovoids in the material.

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“…Heavier ions, e.g., SiH þ 3 and Ar þ , can result in the displacement of Si atoms; threshold ion energies of 18 and 40 eV have been reported for ion-induced Si surface and bulk atom displacement, respectively. 61 At even higher energies, the Si atoms can be physically removed from the surface via sputtering (E ion > 50 eV). 62 For bias conditions where Si surface atom displacement is significantly activated, i.e., jV dc j > 18 V, we observe a densification of the a-Si:H tissue, deduced from the decrease in HSM [ Fig.…”

Section: On the Role Of Ionsmentioning

confidence: 99%

Ion-induced effects on grain boundaries and a-Si:H tissue quality in microcrystalline silicon films

Bronneberg

Cankoy

Sanden

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Microcrystalline silicon films have been deposited by means of the remote expanding thermal plasma. The effect of ion bombardment on the microcrystalline silicon film properties has been investigated by applying an RF bias to the deposition substrate. The application of the RF substrate bias resulted in the formation of an additional plasma in front of the substrate holder. Neither the SiH 4 depletion nor the growth flux was significantly enhanced upon substrate biasing, which suggests that (the composition of) the growth precursor flux is unaffected and that the ion-film interaction mechanisms were responsible for the observed material changes. Moderate bias conditions (i.e., dc bias voltages up to $70 V) led to an improved grain boundary passivation and densification of the amorphous silicon tissue, as concluded from the analysis of the infrared Si-H x stretching modes. These improvements have been ascribed to ion-induced Si surface atom displacement, which enhances the surface diffusion length of the growth precursors. More-energetic ion bombardment (i.e., under applied dc bias voltages of $60 V and higher) resulted in enhanced (di)vacancy incorporation via ion-induced Si bulk atom displacement. The film crystallinity was found not to be affected by the ion bombardment, although a reduced crystallite size was observed under ion bombardment conditions where Si bulk displacement had been sufficiently activated. The extent of the ion-film interaction mechanism has been enhanced...

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Ion-Induced Surface and Bulk Displacement Threshold for Epitaxial Growth

Cited by 21 publications

References 21 publications

The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition

The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition

Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

Ion-induced effects on grain boundaries and a-Si:H tissue quality in microcrystalline silicon films

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