Ion irradiation and defect formation in single layer graphene

Compagnini, Giuseppe; Giannazzo, Filippo; Sonde, Sushant; Raineri, V.; Rimini, E.

doi:10.1016/j.carbon.2009.07.033

Cited by 211 publications

(149 citation statements)

References 23 publications

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“…Previous studies reported vacancy-type defects induced by ion irradiation of exfoliated graphene [12,13]. In this Letter we report on the irradiation of CVD-grown graphene with carbon ions.…”

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confidence: 81%

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Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

Buchowicz

Stone

Robinson

et al. 2011

Applied Physics Letters

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Abstract:Graphene grown by chemical vapor deposition and supported on SiO 2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging from 10 12 cm -2 to 10 15 cm -2 indicate that the structure of graphene evolves from a highlyordered layer, to a patchwork of disordered domains, to an essentially amorphous film.These structural changes result in a dramatic decrease in the Hall mobility by orders of magnitude while, remarkably, the Hall concentration remains almost unchanged, suggesting that the Fermi level is pinned at a hole concentration near 1x10 13 cm -2 . A model for scattering by resonant scatterers is in good agreement with mobility measurements up to an ion fluence of 1x10 14 cm -2 .(a)

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confidence: 81%

“…Raman spectra for graphene-on-SiO 2 following select ion fluences are shown in report that when the D line becomes more intense, structurally-disordered domains grow throughout the graphene layer [13].…”

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confidence: 99%

Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

Buchowicz

Stone

Robinson

et al. 2011

Applied Physics Letters

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“…In previous studies graphene has been irradiated with either low energy ions (LEI) or light ions and with high ion fluences of (from 10 11 ions/cm 2 up to 10 18 ions/cm 2 ) normal to the surface. These reports have shown that it is indeed possible to induce defects with energetic ions even in suspended graphene sheets [10,11,12,13]. Furthermore, it has been shown that by irradiating single layer graphene (SLG) with swift heavy ions (SHI) with ∼100 MeV kinetic energy under glancing incidence angle, origami like foldings of the graphene sheet are induced by individual ions [14].…”

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confidence: 99%

Detecting swift heavy ion irradiation effects with graphene

Ochedowski

Akcöltekin

Ban-d’Etat

et al. 2013

Nuclear Instruments and Methods in Physics Research Section B:

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In this paper we show how single layer graphene can be utilized to study swift heavy ion (SHI) modifications on various substrates. The samples were prepared by mechanical exfoliation of bulk graphite onto SrTiO 3 , NaCl and Si(111), respectively. SHI irradiations were performed under glancing angles of incidence and the samples were analysed by means of atomic force microscopy in ambient conditions. We show that graphene can be used to check whether the irradiation was successful or not, to determine the nominal ion fluence and to locally mark SHI impacts. In case of samples prepared in situ, graphene is shown to be able to catch material which would otherwise escape from the surface.

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“…Ion irradiation can be used to introduce structural defects in graphene and other carbon allotropes 16 , and provides a versatile tool for manipulating their physical properties 7,[17][18][19][20][21][22] For this purpose, proton irradiation, in particular, attracts much interest due to the observed irradiation-induced magnetism in graphite and graphene [23][24][25][26][27][28][29] , which was attributed to defects, e.g., vacancies and H species 24 . However, an atomic-resolved determination, e.g.…”

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confidence: 99%

Simulation of high-energy ion collisions with graphene fragments

et al. 2012

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The collision of energetic ions and graphene fragments is studied in the framework of real-space finite-difference time-dependent density functional theory (TDDFT) coupled with classical molecular dynamics for nuclei. The amount of energy transferred from the projectile to the target is calculated to explore the defect formation mechanisms as a function of the projectile's energy. It is found that creation of defects in graphene due to the interaction of a fast proton with valence electrons is unlikely. In the case of projectiles with higher charges the transferred energy increases significantly, leading to higher probability of bond breaking.

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Ion irradiation and defect formation in single layer graphene

Cited by 211 publications

References 23 publications

Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

Detecting swift heavy ion irradiation effects with graphene

Simulation of high-energy ion collisions with graphene fragments

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