Ion Irradiation Control of Ferromagnetism in (Ga,Mn)As

Katô, Hiroaki; Hamaya, Kohei; Taniyama, Tomoyasu; Kitamoto, Yoshitaka; Munekata, H.

doi:10.1143/jjap.44.l816

Cited by 6 publications

(6 citation statements)

References 23 publications

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“…In the group of III-V semiconductor compounds, gallium phosphide (GaP) represents an interesting system composed of a cubic zinc blende (ZB) structure and it has broad usages in cellular phones and electronic equipment such as semiconductor lasers and optoelectronic devices, etc. GaP is regarded as a convenient host compound to design DMS material and this could be effectuated through doping by TMs, as corroborated via several theoretical and experimental reports [10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27]. Based on AC magnetization measurements, the affirmation of a ferromagnetic state in bulk sintered GaP substituted by 3% Mn is procured at T C of 600 K, which is substantially larger than the previous examinations.…”

Section: Introductionmentioning

confidence: 73%

“…The crystal field produced via the four P nearest-neighbors yields the splitting of Mn-d levels into doubly degenerated e g states and triply degenerated t 2g states (Figure 7). Accordingly, the substantial interaction between the 3d-t 2g orbitals of Mn and P-3p orbitals leads to the pushing up of the 3d-t 2g states upward of the e g states [15,16,17,24,25,26,27]. The computed GGA + U band gap of minority spin varies between 1.7 and 0.8 eV when varying the x concentration.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, the semiconductors substituted by 3d transition metals (TMs) turn salient, owing to the feasibility of merging magnetism and semiconductor features [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15]. The 3d-TM doped III-V compounds behave as III-V DMS, which captivated a tremendous amount of attention for a viable growth in efficient and miniaturized electronic devices [16]. Various DMS materials [7,8,9,10,11,12,13,14,15] have been exhaustively explored from theoretical and experimental perspectives with the purpose of designing powerful devices such as outstanding smart memory chips, super smart diodes, spin valves, and spin field-effect transistors.…”

Section: Introductionmentioning

confidence: 99%

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Ab-Initio Investigations of Magnetic Properties and Induced Half-Metallicity in Ga1−xMnxP (x = 0.03, 0.25, 0.5, and 0.75) Alloys

et al. 2017

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Ab-initio calculations are performed to examine the electronic structures and magnetic properties of spin-polarized Ga1−xMnxP (x = 0.03, 0.25, 0.5, and 0.75) ternary alloys. In order to perceive viable half-metallic (HM) states and unprecedented diluted magnetic semiconductors (DMSs) such as spintronic materials, the full potential linearized augmented plane wave method is utilized within the generalized gradient approximation (GGA). In order to tackle the correlation effects on 3d states of Mn atoms, we also employ the Hubbard U (GGA + U) technique to compute the magnetic properties of an Mn-doped GaP compound. We discuss the emerged global magnetic moments and the robustness of half-metallicity by varying the Mn composition in the GaP compound. Using GGA + U, the results of the density of states demonstrate that the incorporation of Mn develops a half-metallic state in the GaP compound with an engendered band gap at the Fermi level (EF) in the spin–down state. Accordingly, the half-metallic feature is produced through the hybridization of Mn-d and P-p orbitals. However, the half-metallic character is present at a low x composition with the GGA procedure. The produced magnetic state occurs in these materials, which is a consequence of the exchange interactions between the Mn-element and the host GaP system. For the considered alloys, we estimated the X-ray absorption spectra at the K edge of Mn. A thorough clarification of the pre-edge peaks is provided via the results of the theoretical absorption spectra. It is inferred that the valence state of Mn in Ga1−xMnxP alloys is +3. The predicted theoretical determinations surmise that the Mn-incorporated GaP semiconductor could inevitably be employed in spintronic devices.

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Section: Introductionmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ab-Initio Investigations of Magnetic Properties and Induced Half-Metallicity in Ga1−xMnxP (x = 0.03, 0.25, 0.5, and 0.75) Alloys

et al. 2017

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“…A strong dependence of the magnetization on carrier concentration is also seen in experiments on series of samples with different dopand concentrations. 7,8,9 On a microscopic level, each local moment magnetically polarizes the carriers in its vicinity due to the exchange interaction between carriers and localized (usually d-shell) electrons of impurity ions. The other local moments see these carrier spin polarizations, leading to an effective magnetic interaction between local moments.…”

Section: Introductionmentioning

confidence: 99%

Possible magnetic-field-induced voltage and thermopower in diluted magnetic semiconductors

Timm

2006

Phys. Rev. B

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In diluted magnetic semiconductors, the carrier concentration and the magnetization of local moments are strongly coupled, since the magnetic interaction is mediated by the carriers. It is predicted that this coupling leads to an electric polarization due to an applied magnetic-field gradient and to the appearance of a magneticfield-dependent voltage. An expression for this voltage is derived within Landau theory and its magnitude is estimated for (Ga,Mn)As. Furthermore, a large contribution to the thermopower based on the same mechanism is predicted. The role of fluctuations is also discussed. These predictions hold both if the magnetization is uniform and if it shows stripe-like modulations, which are possible at lower temperatures.

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“…Since the magnetic interaction is mediated by the carriers, the magnetization and the Curie temperature increase for increasing carrier concentration [5][6][7][8][9][10]. In fact, the magnetization can be changed in situ by tuning the carrier concentration with a gate voltage [5,6,8].…”

mentioning

confidence: 99%

Charge and Magnetization Inhomogeneities in Diluted Magnetic Semiconductors

Timm

2006

Phys. Rev. Lett.

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It is predicted that III-V diluted magnetic semiconductors can exhibit stripelike modulations of magnetization and carrier concentration. This inhomogeneity results from the strong dependence of the magnetization on the carrier concentration. Within Landau theory, a characteristic temperature T below the Curie temperature is found so that below T the equilibrium magnetization shows modulations, which are strongly anharmonic. The wavelength and amplitude of the modulation rise for decreasing temperature, starting from zero at T . Above T , the equilibrium state is homogeneous, but the coupling between charge and magnetization leads to the appearance of an electrically charged layer in domain walls.

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Ion Irradiation Control of Ferromagnetism in (Ga,Mn)As

Cited by 6 publications

References 23 publications

Ab-Initio Investigations of Magnetic Properties and Induced Half-Metallicity in Ga1−xMnxP (x = 0.03, 0.25, 0.5, and 0.75) Alloys

Ab-Initio Investigations of Magnetic Properties and Induced Half-Metallicity in Ga1−xMnxP (x = 0.03, 0.25, 0.5, and 0.75) Alloys

Possible magnetic-field-induced voltage and thermopower in diluted magnetic semiconductors

Charge and Magnetization Inhomogeneities in Diluted Magnetic Semiconductors

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