Ion-irradiation-induced porosity in GaSb

Abstract

Porosity in GaSb induced by 69 Ga ion irradiation has been investigated as a function of implant dose and temperature. Initially pores form in the implanted material which become elongated as they increase in size. With increasing implant dose, the structure continues to evolve into plates and finally a network of nanoscale rods. Swelling to 25 times the original implanted layer thickness has been observed. The temperature dependence of the minimum feature size has been established. The crystalline-to-amorphous and continuous-to-porous transformations proceed simultaneously. We suggest the latter results from the precipitation of interstitials at extended crystalline defects in preference to Frenkel pair recombination as potentially related to anomalous diffusion in GaSb.

Optical investigation of GaSb thin films grown on GaAs by metalorganic magnetron sputtering

“…The III-V compound semiconductor gallium antimonide (GaSb) has in recent years attracted much attention as an important material for infrared (IR) optoelectronic and electronic device in the wavelength range 1-5 μm [1][2][3][4][5][6][7][8][9][10][11][12][13]. GaSb has an energy bandgap of 0.70 eV (1.77 μm) at room temperature (RT) and 0.81 eV (1.53 μm) at 4 K [14].…”

Nano-porosity in GaSb induced by swift heavy ion irradiation

“…In the low energy regime, where nuclear stopping is predominant, the formation of porous structures has been reported for Ge, GaSb, and InSb. [8][9][10][11][12][13][14][15][16] In general, the formation of porosity is attributed to clustering of vacancies that are generated during the elastic collisions when the material is irradiated by energetic ions. In the case of Ge, porosity was only observed after the material was first rendered amorphous.…”

Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb

“…In the case of GaN, [5][6][7][8] nitrogen bubbles and gallium nanocrystals are formed in the amorphized layer by ion irradiation. In the case of GaSb [9][10][11][12][13][14][15][16][17] and InSb, 9,17,18) unusual behaviors, such as elevation, swelling, and the formation of holes, voids, nanofibers, and cellular structures with nano to submicron dimensions, are observed on irradiated surfaces. Similar phenomena occur in irradiated Ge surfaces (for example, see Refs.…”