Ion migration in perovskite solar cells

Ren, Xiaoxue; Zhang, Lixiu; Yuan, Yongbo; Ding, Liming

doi:10.1088/1674-4926/42/1/010201

Cited by 30 publications

(33 citation statements)

References 21 publications

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“…Although these extrinsic methods can significantly improve the device performance and stability, they would not eradicate the inherent causes of ion migration. [35,36] It is well established that the ion migration in PvSCs usually initiates at the grain boundaries (GBs) and interfaces, where various vacancies usually formed. [37][38][39] Therefore, to cure the disease rather than just the symptoms, a second strategy emerged to eliminate the intrinsic triggering factor of ion migration, for example, relaxing the lattice strain [40] and passivating the vacancies at GBs and interfaces (such as crystallization and additive engineering).…”

Section: Introductionmentioning

confidence: 99%

Rear Interface Engineering to Suppress Migration of Iodide Ions for Efficient Perovskite Solar Cells with Minimized Hysteresis

Xiong

Wang

Zhou

et al. 2021

Adv Funct Materials

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Accurate interface engineering can effectively inhibit iodide ion migration, thereby improving the stability and photovoltaic performance of perovskite solar cells (PvSCs). The time-of-flight secondary-ion mass spectrometry reveals that in an aged n-i-p-type PvSC, the iodide ions will move toward the rear side and enter the FTO cathode. In this regard, the authors describe a simple thermal evaporation strategy for introducing an NdCl 3 interface layer (NdCl 3 -IL) at the rear interface of perovskites to interdict the iodine ion migration pathway, leading to reduced trap densities throughout the whole perovskite region. As a result, a boosted open-circuit voltage (V OC ) is achieved, resulting in power conversion efficiency (PCE) up to 22.16% with negligible hysteresis. The NdCl 3 -IL also enhances the device stability, maintaining 83% of initial PCE after the maximum-power-point tracking test for 100 h. More encouragingly, a certified PCE of 21.68% is demonstrated on a large-area (1 cm 2 ) device with combined 2D/3D passivation strategies.

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Section: Introductionmentioning

confidence: 99%

Rear Interface Engineering to Suppress Migration of Iodide Ions for Efficient Perovskite Solar Cells with Minimized Hysteresis

Xiong

Wang

Zhou

et al. 2021

Adv Funct Materials

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“…Although high PCE has been certified, the widespread application of PSC is hindered by its poor long‐term stability. The stability of the perovskite active layer which is normally sandwiched between carrier extraction and transport layers is crucial to the fabrication of operationally stable PSCs 6 . Presently methylammonium (MA + ) cations are widely incorporated into most of high‐efficiency perovskite compositions 7–10 .…”

Section: Introductionmentioning

confidence: 99%

“…The stability of the perovskite active layer which is normally sandwiched between carrier extraction and transport layers is crucial to the fabrication of operationally stable PSCs. 6 Presently methylammonium (MA + ) cations are widely incorporated into most of high-efficiency perovskite compositions. [7][8][9][10] However, MA + cations have been revealed to easily leave from the perovskite crystal lattices, resulting in the poor thermal stability, [11][12][13] light stability, 14 and moisture stability, 15 which poses a severe challenge for achieving long-term operationally stable PSCs.…”

Section: Introductionmentioning

confidence: 99%

Interfacial defect passivation by novel phosphonium salts yields 22% efficiency perovskite solar cells: Experimental and theoretical evidence

Zhou

Liu

et al. 2021

EcoMat

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We modified perovskite/Spiro‐OMeTAD interface by using two novel phosphonium salts containing PF6− counter anion (i.e., ClTPPPF6 and BrTPPPF6). The cation and anion in phosphonium salts possess not only ionic bonds but also coordination bonds with perovskites. The anion and cation vacancies at the surface and GBs of perovskite films can be filled by phosphonium cations and PF6− anions, respectively, resulting in reduced defect density and prolonged carrier lifetimes. The stronger chemical interaction and accordingly better defect passivation were certified for BrTPPPF6 than ClTPPPF6. As a result, the devices modified by ClTPPPF6 and BrTPPPF6 deliver a PCE of 21.73% and 22.15%, respectively, which far exceed 20.6% of the control device. The unsealed BrTPPPF6 modified device maintains 98.2% of its initial efficiency value after thermal aging of 1320 h whereas merely 84.7% for the control device. 96.4% of its original efficiency was retained for BrTPPPF6‐modified device after ambient exposure of 2016 h.

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“…However, to make PVK competitive to c-Si, the issues related to device lifetime still need to be addressed. The instability part of PVK film comes mainly from defects (ion migration) 217,218 , pinholes (lattice deformation) 219 , and phase transition 220 , which may accelerate the degradation in presence of water 221 , high temperature 222 , light 223 and electric field 224 . To estimate the potential lifetime of PSCs, the International Electrotechnical Commission (IEC) is normally used based on a series of strict tests, such as UV-light, thermal cycling and damp heating 142 .…”

Section: Sources Of Instabilitymentioning

confidence: 99%