Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory

Тихов, С. В.; Горшков, О. Н.; Антонов, И. Н.; Морозов, А. И.; Koryazhkina, M. N.; Филатов, Д. О.

doi:10.1155/2018/2028491

Cited by 17 publications

(17 citation statements)

References 26 publications

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“…It should be noted that the presence of a higher concentration of vacancies near TE and grain boundaries with a reduced energy of oxygen ion migration in the ZrO 2 (Y) film creates the necessary conditions for the growth of conducting filaments along the grain boundaries under the action of electric field and Joule heating, as was previously reported …”

Section: Resultsmentioning

confidence: 60%

“…In accordance with our experimental data, the dielectric properties of device in the IS state (Figure a) are provided by the ZrO 2 (Y) and Ta 2 O 5 layers. The ZrO 2 (Y) layer contains the initial concentration of oxygen vacancies corresponding to the degree of yttrium doping (about 6% of total number of oxygen sites) and grain boundaries (nominally marked as GB with dashed lines), which are characterized by the oxygen depletion and lower activation energy for the migration of oxygen vacancies . The Ta 2 O 5 film contains an excess of tantalum atoms and inter‐columnar boundaries (despite the amorphous structure).…”

Section: Resultsmentioning

confidence: 99%

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Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Mikhaylov

Belov

Королев

et al. 2019

Adv Materials Technologies

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nanoelectronic devices with the effect of resistive switching, which consists in a reversible change of resistance in response to electrical stimulation [5] and is identified with the memristive effect. [6] Despite the significant progress in understanding of the memristive effect and approaching maturity of the technology of resistiveswitching devices over the last 10 years, there are still a number of fundamental problems to solve.A key problem on the way of using resistive-switching devices as programmable elements in memory devices and mixed analog-digital processors of new generation is the variability of resistive switching parameters inherent to memristive thin-film devices. [7] Achieving stable switching between the nonlinear resistive states is also an important task on the way to implementing large passive crossbar arrays of memristors and solving the problem of leakage currents in them. [8,9] Metal-oxide memristive devices are most compatible with the traditional complementary metal oxide semiconductor (CMOS) process and exhibit a valence change memory effect. [10] The variation of switching parameters in such devices is caused by the stochastic nature of migration of oxygen ions and/or vacancies responsible for the local oxidation and recovery of conductive channels (filaments) and is accompanied by the degradation of switching parameters in the case of uncontrolled oxygen exchange between the dielectric and electrode materials.The traditional approaches to control the reproducibility of resistive switching include the formation of special electric field concentrators [11][12][13] and appropriate selection of materials/interfaces in memristive device structure. In the latter case, bilayer or multilayer structures are formed, in which the switching oxide alternates with a barrier/buffer layer (layers) to control the migration of oxygen vacancies, [14,15] with a layer of low dielectric constant [16,17] to obtain nonlinear currentvoltage (I-V) characteristics, or with a layer of higher/lower thermal conductivity [18,19] for the removal/retention of heat in the switching area and to achieve analog switching character. To tune the resistive states with given accuracy, regardless of

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Section: Resultsmentioning

confidence: 60%

Section: Resultsmentioning

confidence: 99%

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Mikhaylov

Belov

Королев

et al. 2019

Adv Materials Technologies

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“…Этот гистерезис проявлялся уже при комнатной температуре и может быть объяснен захватом свободных электронов на глубокие ловушки, локализованные в диэлектрике на границе с металлической обкладкой, переходом части этого заряда на металл и возникновением электрического поля в диэлектрике, создающего в нем ток при отсутствии внешнего напряжения. Поверхностная концентрация этих ловушек N t , согласно [11], может быть оценена по площади петли гистерезиса ВАХ Q из соотношений…”

Section: результаты и обсуждениеunclassified

“…3 (кривые 1, 2), следует, что с увеличением температуры выше 410 K (измерения проводились в интервале 300−510 K) электронный ЭЭ переходил в ионный ЭЭ. На это указывает и то, что в указанном температурном интервале c ростом температуры был обнаружен рост квазистатической емкости из-за миграционной поляризации ионов [11]. Энергия активации первого эффекта составляет около 0.19 eV, а второго -0.5 eV.…”

Section: результаты и обсуждениеunclassified

“…Энергия активации первого эффекта составляет около 0.19 eV, а второго -0.5 eV. Значение 0.5 eV хорошо соответствует энергии активации миграции вакансий кислорода по границам зерен в ZrO 2 (Y) [11]. Из температурной зависимости петли ионного гистерезиса (рис.…”

Section: результаты и обсуждениеunclassified

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Электрофизические Характеристики Многослойных Мемристивных Наноструктур На Основе Стабилизированного Иттрием Диоксида Циркония И Оксида Тантала

Тихов¹,

Белов²,

Королев³

et al. 2020

Журнал Технической Физики

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The electrophysical characteristics of multilayer memristive structure Au/Ta/ZrO2(Y)/TaOx/TiN have been studied. The effects of electron and ion electrification associated with carrier trapping on traps and ion migration polarization in a dielectric are found. The effect of traps located in dielectrics on the effects of electroforming and resistive switching is established. The values of activation energy and concentrations for traps and ions are determined. The phenomenon of stabilization of resistive switching, which is associated with the features of the two-layer structure of YSZ/TaOx and self-assembled Ta nanoclusters, is found. Nanoclusters play the role of electric field concentrators in the process of electroforming and subsequent resistive switching.

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A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching

Vazquez‐Arce,

Molina‐Reyes,

Contreras

et al. 2023

Adv Elect Materials

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The physics behind the switching kinetics of memristors is gradually becoming clearer. The periods required for the onset of electromigration within memristors and the activation or deactivation of the low‐resistance state—referred to as the incubation and switching times—exhibit non‐linearity with applied voltage. This behavior prevails depending on the rate‐limiting step comprising nucleation and filament growth, electron transfer at the electrode/electrolyte interface, and ion migration through the electrolyte. Herein, a model is introduced for ion migration as the rate‐limiting step. This model analyses the incubation time and analytically correlates it with the electric field, diffusion coefficient, and temperature, facilitating the determination of threshold voltage and diffusivity from high to low resistance states for ion migration as the rate‐limiting step. By exploring parallel plate cells with Yttria‐Stabilized Zirconia (YSZ) of nanometer thickness, the application of the model is illustrated and the fundamental equations are applied to outstanding memristive cells in the literature. The applicability of this model to cells of various charge carriers is proposed, ranging from vacancies and electron transport to oxygen ions and metal cations, denoting its potential importance.

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Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory

Cited by 17 publications

References 26 publications

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Электрофизические Характеристики Многослойных Мемристивных Наноструктур На Основе Стабилизированного Иттрием Диоксида Циркония И Оксида Тантала

A Voltage‐Driven Transport Model to Identify Ion Migration as the Rate‐Limiting Step in Memristive Switching

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