Ion mixing in Ag-films on Si-substrates induced by a high fluence 40Ar+ beam with a flux of 0.2 μA/cm2

Masoud, Nazieh; Arafah, D.-E.; Becker, K.

doi:10.1016/s0168-583x(02)01515-x

Cited by 6 publications

(2 citation statements)

References 40 publications

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“…On the other hand, in the higher flux regime thermal spikes and the RED mechanism play a role. This gives evidence that the mixing process in the Ag/Si system is flux-dependent [384].…”

Section: Ag-simentioning

confidence: 72%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

261

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“…On the other hand, in the higher flux regime thermal spikes and the RED mechanism play a role. This gives evidence that the mixing process in the Ag/Si system is flux-dependent [384].…”

Section: Ag-simentioning

confidence: 72%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

261

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“…The absence of Ag clusters for in situ sample imaging and their presence for ex situ sample imaging is interpreted as follows. During Ag sputter co-deposition Ag is mixed uniformly into the surface-near layer [49] within the ion range. As usual, this layer is ion beam amorphized and Ag atoms may be fixed within the amorphous layer through saturation of Si dangling bonds, similar to adsorbed Ag atoms on Si surfaces [50,51].…”

Section: Ag Co-depositionmentioning

confidence: 99%

Silicide induced ion beam patterning of Si(001)

et al. 2014

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Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation. For the situations investigated, the ability of the impurity to react with Si, i.e. to form a silicide, appears to be a necessary, but not a sufficient condition for pattern formation. Comparing the effects of impurities with similar mass and nuclear charge, the collision kinetics is shown to be not of primary importance for pattern formation. To understand the observed phenomena, it is necessary to assume a bi-directional coupling of composition and height fluctuations. This coupling gives rise to a sensitive dependence of the final morphology on the conditions of impurity supply. Because of this history dependence, the final morphology cannot be uniquely characterized by a steady state impurity concentration.

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Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface

et al. 2006

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Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the Co/Si interface for investigation of ion beam mixing at various doses: 8 × × 10 12 , 5 × × 10 13 and 1 × × 10 14 cm-2. Formation of different phases of cobalt silicide is identified by the grazing incidence X-ray diffraction (GIXRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation. I-V characteristics at Co/Si interface were undertaken to understand the irradiation effect on conduction mechanism at the interface.

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Ion mixing in Ag-films on Si-substrates induced by a high fluence 40Ar+ beam with a flux of 0.2 μA/cm2

Cited by 6 publications

References 40 publications

Ion beam induced surface and interface engineering

Ion beam induced surface and interface engineering

Silicide induced ion beam patterning of Si(001)

Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface

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