Ion Sources

Aitken, D.

doi:10.1007/978-3-642-68779-2_2

Cited by 7 publications

(1 citation statement)

References 13 publications

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“…The two-grid system of the Kaufman gun (screen and accelerator grids) does not require the target to be at high voltage. For a detailed description of the two-grid system and the construction of the ion gun the reader is referred to the literature [11,[13][14][15].…”

Section: The Ion Sourcementioning

confidence: 99%

A universal ion-beam-sputtering device for diffusion studies

Wenwer

Gude

Rummel

et al. 1996

Meas. Sci. Technol.

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An apparatus for ion-beam-sputtering is described which offers for the first time the possibility of measuring radiotracer diffusion profiles with mean diffusion length (Dt) 1/2 (D is the tracer diffusion coefficient and t is the diffusion time) in the nano-as well as in the micrometre range. It is also possible to use the device for ion milling, especially for the deposition of thin layers of radiotracer onto diffusion samples. Investigations of diffusion in pure metals, in a metallic glass, in a compound semiconductor and in intermetallic compounds are presented as examples.

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Section: The Ion Sourcementioning

confidence: 99%

A universal ion-beam-sputtering device for diffusion studies

Wenwer

Gude

Rummel

et al. 1996

Meas. Sci. Technol.

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Quantitative sputtering

Zalm

1988

Surface & Interface Analysis

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This review discusses experimental techniques used for determining the variety of observables in ion-bombardment induced erosion of solid surfaces. Boundary conditions for performing reproducible and accurate sputtering yield measurements are formulated. To this end, an inventory is made of the observed systematics in several phenomena accompanying sputtering and of the more regular exceptions to the general trends, also, a brief treatment of some theoretical predictions is given, based on the available literature. Following this extensive survey, the merits and limitations of a number of measurement methods, tailored to study one or more different observables, are discussed. Techniques that seem widely applicable or highly promising are emphasized.

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Ion Implantation

El-Kareh

1995

Fundamentals of Semiconductor Processing Technology

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Ion Sources

Cited by 7 publications

References 13 publications

A universal ion-beam-sputtering device for diffusion studies

A universal ion-beam-sputtering device for diffusion studies

Quantitative sputtering

Ion Implantation

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