1976
DOI: 10.1051/jphyscol:1976778
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Ionic Conductivity Measurements of Barium Fluoride Single Crystals

Abstract: R6sumB. -Nous avons mesure la conductivite avec une tension alternative des monocristaux de BaF2 jusqu'a 1 336 K. Aux temperatures plus 6levCes nous avons observe les effets de la polarization, peut-&re le rbultat d'une reaction des cristaux avec I'atmosphere dans le dispositif. Les energies des defauts derives du domaine de tempbature moins eleve s'accordent bien avec ceux que Barsis et Taylor 127, 281 ont obtenu. L'effet de la transition de phase aux hautes temperatures sur la conductivitb est discute.Abstra… Show more

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Cited by 13 publications
(6 citation statements)
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“…Instead it has now been shown convincingly that this positb viation relates to a change from intrinsic conductivity by fluoride ion vacancic intrinsic conductivity by fluoride interstitials [29][30][31]37,40]. It should, how~ be pointed out that Carr et al [29] found evidence for slightly higher conduc ties in the region 1120-1250 K (= Tc) than can be modelled with the vacancy to interstitial conductivity change over. From the concentration data in table 1 it is apparent that vacancy-interstitial interactions [39] can be of importance around T c, and the cause of this deviation in the region 1120-1250 K.…”
Section: Defect Parameters At T Ementioning
confidence: 93%
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“…Instead it has now been shown convincingly that this positb viation relates to a change from intrinsic conductivity by fluoride ion vacancic intrinsic conductivity by fluoride interstitials [29][30][31]37,40]. It should, how~ be pointed out that Carr et al [29] found evidence for slightly higher conduc ties in the region 1120-1250 K (= Tc) than can be modelled with the vacancy to interstitial conductivity change over. From the concentration data in table 1 it is apparent that vacancy-interstitial interactions [39] can be of importance around T c, and the cause of this deviation in the region 1120-1250 K.…”
Section: Defect Parameters At T Ementioning
confidence: 93%
“…1 indicate that the occurrence of a negative deviation from Arrhenius behavior is related with a critical mobility for the anion vacancies. The data in table 1 show its value to be about 2. been observed for SrF 2 [38] and BaF 2 [29,38] starting about 400 K below T for/3-PbF 2 starting at about 240 K below T c [7,17,31]. The upward curvatur, often been related with the broad specific heat anomaly, and hence the onset ordering of the anion sublattice.…”
Section: Defect Parameters At T Ementioning
confidence: 99%
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“…8, presenting also the calculated values of D6, that the simulated DF is at least in qualitative agreement with experiment. 12,13 Activation energy of conductivity EQ depends on temperature and is E6 = 0.4 eV near the melting point. This value agrees with the value of activation energy of diffusion ED = 0.3 eV, obtained from MD -simulation.…”
mentioning
confidence: 99%
“…the enthalpies and entropies of defect formation, migration and association. Ionic conductivity runs should generally comprise something between 100 and 200 measurements taken from the precipitation temperature up to as close to the melting point as possible 161 although experimental difficulties caused by sublimation [7], deformation [8], or reaction of the crystal [9] may prevent the full exploitation of this ideal range. It is not feasible to obtain the same high density of data in diffusion measurements.…”
mentioning
confidence: 99%