In
this work we present an experimental and theoretical study from
first-principles of the structural, electronic, and hyperfine properties
of Ta-doped In2O3 semiconductor. The ab initio electronic structure calculations in the Ta-diluted
In2O3 system enabled to obtain the structural
lattice distortions and the hyperfine parameters when the Ta atom
is placed at each cationic site of the bixbyite crystal
structure. To this purpose we used the full-potential augmented plane
wave plus local orbital (FP-APW+lo) method, within the density functional
theory. The obtained results indicate that the substitutional Ta probe-impurity
produces strong changes on the local structure. In addition, we performed
accurate time-differential perturbed γ–γ angular
correlations (TDPAC) key experiments in 181Hf(→181Ta)-implanted In2O3 samples with high
crystallinity, in order to obtain high quality measurements of the
electric-field gradient tensor (EFG) that unraveled the controversy
settled in the literature and overcome dissimilar interpretations
of previously reported TDPAC experiments. The experiments were performed
at room temperature in air, after each step of a series of thermal
annealing treatments in air at increasing temperatures in order to
remove radiation damage and locate the 181Hf probes at
substitutional cationic sites. We succeeded to obtained two well-defined
hyperfine interactions that were assigned to 181Ta probes
located at the two defect-free inequivalent cationic sites of the
In2O3 crystal structure. The EFG calculations
are in excellent agreement with the results of these TDPAC measurements,
and show that the largest component of the diagonalized EFG, V
33, at the Ta site has mainly p character. The accuracy of the experiments together with the reliable
and precise ab initio results allowed a definitive
determination of the EFG at both cationic sites in this system. Formation
energy calculations of defects were needed to determine the charge
state of the 181Ta impurity, which agrees with a semiconducting
character for the In2O3:Ta doped system.