Ionic exchange of Hf donor impurities in the wide-gap semiconductor Tm2O3

Muñoz, E. L.; Darriba, G. N.; Bibiloni, A. G.; Errico, L. A.; Rentería, M.

doi:10.1016/j.jallcom.2009.10.038

Cited by 10 publications

(15 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7). This observation is also valid for the rest of the bixbyites studied with the 181 Hf probe [29,35,[92][93][94][95][96] Cd are equal, reflecting the same electron density in the neighborhood of the probe-atom. This fact is in excellent agreement with the results obtained in the ab initio calculations in Cd-doped In 2 O 3 performed almost 20 years later than the first experiments.…”

supporting

confidence: 60%

“…This second probe, introduced in the same systems studied with 111 Cd, allows to study the influence of the electronic configuration of the impurity probe atom itself on the EFG. From the early nineties, many crystal structures have been implanted with 181 Hf probes [29,35,37,[91][92][93][94][95][96]101,102], especially the class of bixbyite oxides. Among this group, twelve oxides with the same crystalline structure have been compared and the data show that in all these oxides, Recent data obtained at IPEN using 111 In-diffused in In 2 O 3 powder samples are shown for comparison [90].…”

Section: Defect and Diffusion Forum Vol 311mentioning

confidence: 99%

See 1 more Smart Citation

Impurity Centers in Oxides Investigated by γ-γ Perturbed Angular Correlation Spectroscopy and <i>Ab Initio</i> Calculations

Pasquevich

Rentería

2011

DDF

View full text Add to dashboard Cite

Abstract. In this chapter Perturbed Angular Correlation (PAC) experiments on binary oxides are described. These experiments provide local-scale fingerprints about the formation, identification, and lattice environment of defect complexes at the PAC probe site. The potential of the PAC observations in conjunction with ab initio calculations is shown. Measurements of the electric-field gradient at impurity sites using 111 Cd and 181 Ta probes are reviewed. Special attention is paid to oxides with the bixbyite structure. The case of In 2 O 3 is particularly analyzed. Results obtained with HfO 2 , in form of coarse grain or nano particles, are described. The potential results that can be obtained from Density Functional Theory ab initio calculations in doped systems are shown describing the main results observed in many impurity-host systems.

show abstract

supporting

confidence: 60%

Section: Defect and Diffusion Forum Vol 311mentioning

confidence: 99%

Impurity Centers in Oxides Investigated by γ-γ Perturbed Angular Correlation Spectroscopy and <i>Ab Initio</i> Calculations

Pasquevich

Rentería

2011

DDF

View full text Add to dashboard Cite

show abstract

“…The measured EFGs at both sites are in very good agreement with those previously obtained in a sample prepared by 181 Hf ion implantation of the commercial powder. Our experimental results are also consistent with the prediction of the well-established 181 Ta EFG systematics for rare-earth bixbyites [18,26]. In addition, our experimental interaction assignment is supported by the APW+lo calculations of the EFG tensor, which confirm that the cationic sites in which the probes are located in both experiments ( [25] and this work) are free of defects.…”

Section: Discussionsupporting

confidence: 89%

“…For these reasons, in order to extend the useful range of the PAC spectroscopy, alternative and low-cost ways to prepare samples have been investigated mainly in the last decade. Among them, we can include those based in solid-state reactions between oxides [26,27] or the chemical precipitation method [28]. These alternative methods have shown their capability to successfully introduce the 181 Ta probe nuclei in a host matrix, nevertheless, the corresponding PAC experiments usually need additional supporting evidence to reach a complete interpretation of the complex spectra they give.…”

Section: Introductionmentioning

confidence: 99%

Substitutional Ta-doping in Y₂O₃ semiconductor by sol-gel synthesis: experimental and theoretical studies

Richard

Rentería

Carbonari

2017

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The Pechini sol-gel method has been employed for the synthesis of pure and ( 181 Hf→) 181 Ta-doped Y 2 O 3 nanopowders. We performed a structural characterization from the micro to the subnanoscopic scale by means of scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, and time-differential perturbed γ-γ angular correlation (PAC) spectroscopy. The results show the formation of the cubic bixbyite structure after a thermal treatment at 1473 K. For the synthesized 181 Ta-doped Y 2 O 3 , the PAC experiments demonstrate that the impurities are mainly located at both substitutional cationic sites of the bixbyite structure. The experimental investigation was complemented by performing firstprinciples electronic structure calculations for Ta atoms localized at the two cationic sites of the Y 2 O 3 semiconductor structure, which allow the study of the structural and electronic modifications induced in the host system when the impurities are introduced. These calculations confirm that the measured electric-field gradients for the synthesized 181 Ta-doped Y 2 O 3 correspond to double-ionized impurities located at substitutional defect-free cationic sites of the bixbyite host structure and indicate the site occupancy preference for 181 Hf(→ 181 Ta) doping. The behaviour of the site preference of 181 Ta impurities with temperature is also discussed. In addition to an extensive structural and electronic characterization of pure and Ta-doped Y 2 O 3 semiconductor, our results demonstrate that the Pechini sol-gel process is an affordable and effective way to successfully synthesize these PAC substitutional doped samples.

show abstract

“…The possibility of formation of this phase as a result of the doping of the Si matrix with hafnium or the incorporation of Si in the oxide matrix will be discussed. Experiments of ball milling of binary blends containing hafnia have been reported [19][20][21]. The doping with Hf atoms of the second component has been observed in the cases of binary blends containing Fe 2 O 3 , Cr 2 O 3 [19] and Tm 2 O 3 [20].…”

Section: Resultsmentioning

confidence: 96%

Evolution of the quadrupole hyperfine interaction while milling a Si-HfO2 blend

Chain¹,

Ferrari²,

Damonte³

et al. 2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Ionic exchange of Hf donor impurities in the wide-gap semiconductor Tm2O3

Cited by 10 publications

References 23 publications

Impurity Centers in Oxides Investigated by γ-γ Perturbed Angular Correlation Spectroscopy and <i>Ab Initio</i> Calculations

Impurity Centers in Oxides Investigated by γ-γ Perturbed Angular Correlation Spectroscopy and <i>Ab Initio</i> Calculations

Substitutional Ta-doping in Y₂O₃ semiconductor by sol-gel synthesis: experimental and theoretical studies

Evolution of the quadrupole hyperfine interaction while milling a Si-HfO2 blend

Contact Info

Product

Resources

About

Ionic exchange of Hf donor impurities in the wide-gap semiconductor Tm2O3

Cited by 10 publications

References 23 publications

Impurity Centers in Oxides Investigated by γ-γ Perturbed Angular Correlation Spectroscopy and <i>Ab Initio</i> Calculations

Impurity Centers in Oxides Investigated by γ-γ Perturbed Angular Correlation Spectroscopy and <i>Ab Initio</i> Calculations

Substitutional Ta-doping in Y2O3 semiconductor by sol-gel synthesis: experimental and theoretical studies

Evolution of the quadrupole hyperfine interaction while milling a Si-HfO2 blend

Contact Info

Product

Resources

About

Substitutional Ta-doping in Y₂O₃ semiconductor by sol-gel synthesis: experimental and theoretical studies