Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

Shao, Zhenguang; Yang, Xifeng; You, Haifan; Chen, D. J.; Lu, Hai; Zhang, R.; Zheng, Youdou; Dong, Kun

doi:10.1109/led.2017.2664079

Cited by 31 publications

(17 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, AlGaN compounds also have the intrinsic the solar blindness, which can extend their applications to solar‐blind UV detections and reduce optical filter requirement for the elimination of natural background radiation. Though AlGaN compounds demonstrated the capability to trigger impact ionization for realizing low noise and internal gain, 7,8 Al x Ga 1− x N‐based solar‐blind UV APDs with high Al content still retain serious challenges to overcome, such as high dislocation density, low p ‐type doping efficiency, and carrier impact ionization coefficients in AlGaN alloys 9‐11 . High dislocations density in AlGaN materials could cause high dark current and premature breakdown of devices, while the low doping efficiency results in serious depletion of p ‐AlGaN layer before impact ionization occurs.…”

Section: Introductionmentioning

confidence: 99%

AlGaN‐based p‐i‐p‐i‐n solar‐blind ultraviolet avalanche photodetectors with modulated polarization electric field

Wang

Chang

2020

Int J Numerical Modelling

View full text Add to dashboard Cite

A p-i-p-in front-illuminated Al 0.4 Ga 0.6 N-based separate absorption and multiplication solar-blind ultraviolet avalanche photodetector is proposed to enhance the optoelectronic performances by modulating polarization electric field based on physical simulations. By modulating the pAl x Ga 1−x N interlayer with low Al content, the direction of the polarization electric field could be achieved the same as that of the reverse bias in the multiplication region. The calculated results demonstrate that the designed avalanche photodetectors with a low Al-content pAl x Ga 1−x N layer would significantly reduce the breakdown voltage and enhance the optical gain compared to the conventional counterpart. The effect of modulated polarization electric field on the noise characteristics for the APDs with pAl x Ga 1−x N interlayers is investigated. Moreover, the physical mechanism of the enhanced performances for the APDs with modulated polarization field is explored by the electric field distributions and energy band profiles.

show abstract

Section: Introductionmentioning

confidence: 99%

AlGaN‐based p‐i‐p‐i‐n solar‐blind ultraviolet avalanche photodetectors with modulated polarization electric field

Wang

Chang

2020

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

Section: Algan-based Solar-blind Uv Pdsmentioning

confidence: 99%

“…Additionally, Shao et al proposed and fabricated an AlGaN heterostructure APD with high/low-Al-content AlGaN layers as the multiplication region rather than a conventional homogeneous AlGaN layer based on the SAM structure, as shown in Fig. 15g 228 . The carrier multiplication process is primarily initiated by impact ionization of holes, and the design of the Al 0.2 Ga 0.8 N/Al 0.45 Ga 0.55 N heterostructure in the multiplication region can induce a band offset to facilitate hole ionization.…”

Section: Algan-based Solar-blind Uv Pdsmentioning

confidence: 99%

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

et al. 2021

View full text Add to dashboard Cite

Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal–semiconductor–metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions.

show abstract

“…Avalanche photodiodes (APDs) based on III-nitride are attracting great attention due to their capabilities of low dark-current density, large optical gain as well as Geiger-mode operation [1], [2]. In addition, III-nitride APDs provide natural filters with tunable cutoff wavelengths for high-sensitivity visible-or solar-blind ultraviolet (UV) detection [3], [4]. Compared to photomultiplier tubes (PMTs) that are bulky, fragile, and require optical filters, GaN-based UV-APDs show excellent potential for numerous applications in military systems, medical systems, imaging systems, and space research [5].…”

Section: Introductionmentioning

confidence: 99%

Polarization Enhanced GaN Avalanche Photodiodes With p-type In_0.05Ga_0.95N Layer

et al. 2020

View full text Add to dashboard Cite

In this letter, novel heterostructure p-in GaN avalanche photodiodes (APDs) with p-type In 0.05 Ga 0.95 N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In 0.05 Ga 0.95 N layer generates a negative polarization charge at the pIn 0.05 Ga 0.95 N/i-GaN heterojunction interface via the piezoelectric polarization effect. Three times higher hole concentration in the pIn 0.05 Ga 0.95 N layer is obtained due to the smaller activation energy of the Mg dopant. Induced polarization charge and increased hole concentration work together to reduce the voltage drop in the pIn 0.05 Ga 0.95 N layer and enhance the electric field intensity in the i-GaN layer. The calculated results show that the heterostructure APD demonstrates a reduced operating voltage of more than 26 V and an improved multiplication gain by an order of magnitude in comparison to the conventional one.

show abstract

Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

Cited by 31 publications

References 14 publications

AlGaN‐based p‐i‐p‐i‐n solar‐blind ultraviolet avalanche photodetectors with modulated polarization electric field

AlGaN‐based p‐i‐p‐i‐n solar‐blind ultraviolet avalanche photodetectors with modulated polarization electric field

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Polarization Enhanced GaN Avalanche Photodiodes With p-type In_0.05Ga_0.95N Layer

Contact Info

Product

Resources

About

Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes

Cited by 31 publications

References 14 publications

AlGaN‐based p‐i‐p‐i‐n solar‐blind ultraviolet avalanche photodetectors with modulated polarization electric field

AlGaN‐based p‐i‐p‐i‐n solar‐blind ultraviolet avalanche photodetectors with modulated polarization electric field

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Polarization Enhanced GaN Avalanche Photodiodes With p-type In0.05Ga0.95N Layer

Contact Info

Product

Resources

About

Polarization Enhanced GaN Avalanche Photodiodes With p-type In_0.05Ga_0.95N Layer