Ionization enhanced diffusion

Bourgoin, J. C.; Corbett, J. W.; Frisch, H. L.

doi:10.1063/1.1680596

Cited by 51 publications

(10 citation statements)

References 19 publications

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“…As we knew, the phenomenon of ionization enhanced and induced atom migration or diffusion has been observed in ceramics previously [37][38][39][40], another type of mechanism, knock-on damage, may also play a certain role in the high-energy particle irradiation. In our previous similar study in zircon [41], the knock-on collisions induced preferential sputtering of O from surfaces are responsible for the beam damage on zircon in TEM.…”

Section: Resultsmentioning

confidence: 96%

Electronic ionization induced atom migration in spinel MgAl2O4

Jiang

Spence

2010

Journal of Nuclear Materials

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Section: Resultsmentioning

confidence: 96%

Electronic ionization induced atom migration in spinel MgAl2O4

Jiang

Spence

2010

Journal of Nuclear Materials

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“…The effects of ionization on defect migration rates have been discussed by Bourgoin, Corbett, and Frisch (1973). Changes in migration rates that result because the energy barrier between the lowest energy configuration and the saddle point is difFerent when the defect changes charge state, have been termed ionization enhanced diQus-ion Two other types of ionization effects have also been recognized.…”

Section: At High Temperaturementioning

confidence: 97%

Point defects and dopant diffusion in silicon

1989

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Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects {vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.

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“…Low temperature electron irradiation experiments have long suggested that the self interstitial is mobile in silicon below 4 K [8]. Although these results do not provide a quantitative value of the interstitial diffusivity, they point towards the validity of the Bourgoin-Corbett mechanism of athermal interstitial migration via successive changes in charge state [9]. Ab-initio MD studies by Car et al [ 10] have shown that the equilibrium self-interstitial configuration is the <110> dumbbell, an extended defect which, interestingly, has no states in the gap.…”

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confidence: 70%

Point defect Production, Geometry and Stability in Silicon: a Molecular Dynamics Simulation Study

1993

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We present results of molecular dynamics computer simulation studies of the threshold energy for point defect production in silicon. We employ computational cells with 8000 atoms at ambient temperature of 10 K that interact via the Stillinger-Weber potential. Our simulations address the orientation dependence of the defect production threshold as well as the structure and stability of the resulting vacancy-interstitial pairs. Near the <111> directions, a vacancy-tetrahedral-interstitial pair is produced for 25 eV recoils. However, at 30 eV recoil energy, the resulting interstitial is found to be the <110> split dumbbell configuration. This Frenkel pair configuration is lower in energy than the former by 1.2 eV. Moreover, upon warming of the sample from 10 K the tetrahedral interstitial converts to a <110> split before finally recombining with the vacancy. Along <100> directions, a vacancy-<110> split interstitial configuration is found at the threshold energy of 22 eV. Near <110> directions, a wide variety of closed replacement chains are found to occur for recoil energies up to 45 eV. At 45 eV, the low energy vacancy-<110> split configuration is found. At 300 K, the results are similar. We provide details on the atomic structure and relaxations near these defects as well as on their mobilities.

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Ionization enhanced diffusion

Cited by 51 publications

References 19 publications

Electronic ionization induced atom migration in spinel MgAl2O4

Electronic ionization induced atom migration in spinel MgAl2O4

Point defects and dopant diffusion in silicon

Point defect Production, Geometry and Stability in Silicon: a Molecular Dynamics Simulation Study

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