Ionization-induced annealing in silicon upon dual-beam irradiation

Thomé, L.; Gutierrez, G.; Monnet, I.; Garrido, F.; Debelle, A.

doi:10.1007/s10853-020-04399-8

Cited by 15 publications

(12 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our results are also in good agreement with a recently reported SHIBIEC study [ 13 ], where the weaker effect of electronic stopping was compensated for by much higher applied fluences. Moreover, our results are consistent with another recent dual beam irradiation experiment [ 14 ], where both low energy 900 keV iodine and high energy 27 MeV Fe or 36 MeV W beams were simultaneously applied to a silicon target. Although the result was influenced by the flux of the applied ion beams, it was clear that simultaneous irradiation yields less damage compared to irradiation by only low energy ions.…”

Section: Resultssupporting

confidence: 92%

“…In the case of silicon, ion beam induced epitaxial recrystallisation (IBIEC) using low energy ions with dominant nuclear stopping has been well-studied [ 1 ], but the SHI beam induced epitaxial crystallization (SHIBIEC) has been investigated much less. Although it is practically impossible to produce ion tracks in this material (fullerene beams with extreme values of electronic stopping must be used [ 10 , 11 ]), there is clear evidence that SHI beams can anneal pre-existing damage in silicon [ 12 , 13 , 14 ]. However, this research has mostly been conducted under various experimental conditions like high values of electronic stopping, elevated temperature, or by using dual ion beams.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam

et al. 2021

View full text Add to dashboard Cite

Both silicon and graphite are radiation hard materials with respect to swift heavy ions like fission fragments and cosmic rays. Recrystallisation is considered to be the main mechanism of prompt damage anneal in these two materials, resulting in negligible amounts of damage produced, even when exposed to high ion fluences. In this work we present evidence that these two materials could be susceptible to swift heavy ion irradiation effects even at low energies. In the case of silicon, ion channeling and electron microscopy measurements reveal significant recovery of pre-existing defects when exposed to a swift heavy ion beam. In the case of graphite, by using ion channeling, Raman spectroscopy and atomic force microscopy, we found that the surface of the material is more prone to irradiation damage than the bulk.

show abstract

Section: Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam

et al. 2021

View full text Add to dashboard Cite

show abstract

“…S2). In contrast, S e (Fe) is ~5.5 keV/nm, a level sufficient to induce defect annealing, as previously reported by the authors in [21], and as further demonstrated hereafter. In summary, the present work considers that only S n (I) creates disorder and S e (Fe) partially heals this disorder.…”

Section: Iii1 Srim Resultssupporting

confidence: 83%

“…More precisely, a substantial quantity of defects generated by nuclear collisions (S n ) are eliminated by the deposited electronic energy of swift ions (S e ). This phenomenon (referred to as SNEEL, which stands for synergy between nuclear and electronic energy-losses) does take place in Si [21]. We showed that its magnitude increases with the flux ratio between the S e -and the S nbeam.…”

Section: -Introductionmentioning

confidence: 73%

See 1 more Smart Citation

Disordering kinetics in monocrystalline and epitaxial Si upon energy deposition induced by dual-beam ion irradiation

et al. 2021

Self Cite

View full text Add to dashboard Cite

In this work, the effect on the amorphization process of the simultaneous electronic (S e ) and nuclear (S n ) energy deposition occurring upon dual-beam irradiation experiments was studied in both bulk Si single crystals (Si-b) and epitaxial Si thin layers (Si-tl). For this purpose, 900 keV I (for S n ) and 27 MeV Fe (for S e ) ions were used at different fluences in order to get complete disordering kinetics. These later were determined through the monitoring of both the disorder fraction, obtained via Rutherford backscattering spectrometry in channeling experiments and the elastic strain derived from X-ray diffraction measurements. Raman 2D-maps were also recorded to support the results of the two other techniques. RBS/C data indicate that S n irradiation alone leads to full amorphization of the irradiated region in both Si-b and Si-tl at a fluence of 1.5x10 14 cm -2 . In contrast, during the dual-beam irradiation (S n &S e ), such a complete phase transformation is prevented up to a fluence of 3x10 14 cm -2 . Similarly, the maximum elastic strain developing before the loss of crystallinity reaches a maximum of ~1 % at 1.5x10 14 cm -2 , but it remains below 0.2 % at the same fluence in the S n &S e regime for which full amorphization is not detected. These results indicate that the electronic energy deposition induces a significant dynamic annealing of the damage created by the nuclear energy-loss, and this annealing occurs over the entire investigated fluence range (i.e. up to 3x10 14 cm -2 ). The annealing efficiency is shown to be lower for Si-tl, as demonstrated by the disorder and strain values that are always larger than for the bulk counterpart.

show abstract

Irradiation Defects

BOUFFARD,

SIMÉONE

2023

Nuclear Materials Under Irradiation

View full text Add to dashboard Cite

Ionization-induced annealing in silicon upon dual-beam irradiation

Cited by 15 publications

References 33 publications

Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam

Investigation of Ion Irradiation Effects in Silicon and Graphite Produced by 23 MeV I Beam

Disordering kinetics in monocrystalline and epitaxial Si upon energy deposition induced by dual-beam ion irradiation

Irradiation Defects

Contact Info

Product

Resources

About