Ionization of impurities in silicon

Kuźmicz, Wiesław

doi:10.1016/0038-1101(86)90127-9

Cited by 53 publications

(21 citation statements)

References 16 publications

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“…Ratio of the concentration of ionized impurities to the impurity concentration versus impurity concentration is shown by curve a in Fig. 2, along with that obtained by Kuzmicz [22] (curve b). From this figure one can conclude that these two curves are identical up to the impurity concentration of about 2 x 10l8 ~m -~.…”

Section: Icdsdc Modelsupporting

confidence: 56%

“…The increase of the static dielectric constant with increasing impurity concentration has been recognized as an important effect at low temperatures, where a large amount of non-ionized impurities is expected [ll to 211. However, in spite of the fact that non-ionized impurities also exist at room temperature [22] the influence of the impurity concentration dependent static dielectric constant (denoted henceforth as ICDSDC effect) on effects of heavy doping in silicon has been typically neglected.…”

Section: Introductionmentioning

confidence: 99%

“…Ratio of the concentration of ionized impurities to the impurity concentration vs. impurity concentration in silicon at T = 300 K: (a) this work, (b) from[22] …”

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confidence: 99%

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The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon

Ristić

Prijić

Mijalković

1995

Phys. Stat. Sol. (a)

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The influence of the impurity concentration dependent static dielectric constant on the band-gap narrowing in heavily doped silicon at room temperature is considered. By using phosphorus as an example, the existing expression for the static dielectric constant at low temperatures is recast into a form suitable for the application at room temperature. This is done by taking into account the contribution of non-ionized impurities at room temperature to the static dielectric constant behaviour. Applying the proposed expression for the static dielectric constant to the band-gap narrowing calculations, a good agreement with the widely used empirical expression of Del Alamo and Swanson is obtained.

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Section: Icdsdc Modelsupporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

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The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon

Ristić

Prijić

Mijalković

1995

Phys. Stat. Sol. (a)

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“…We show SIMS data that confirms the significance of surface segregation, and allows us to calibrate our implant recipe to achieve the desired goal. Further, we note that incomplete ionization, a wellknown effect in semiconductors at high dose levels [22], [25], must be considered. The effects of incomplete ionization are measured and help explain what would otherwise be a significant discrepancy as compared to experimental data we shall present.…”

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confidence: 99%

Ultra-Responsive Phase Shifters for Depletion Mode Silicon Modulators

Liu

Dunham

Baehr‐Jones

et al. 2013

J. Lightwave Technol.

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We propose a novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model. We note that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. We predict a low V π L product of 0.31 V.cm associated with a low propagation loss of 20 dB/cm. This would enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The proposed fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required

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“…Source/drain regions were doped at cm with lateral abruptness of nm/decade. Due to the very high doping levels, incomplete ionization was accounted for, according to [7]. Ultrascaled, undoped body, DG devices are expected to exhibit quasi-ballistic transport properties and we analyzed the ultimate performance in our companion paper [8].…”

Section: Simulation Frameworkmentioning

confidence: 99%