Ionization potentials and electron momentum distributions for SiF4 valence-shell orbitals: an (e,2e) spectroscopic investigation and Green's function study

Fantoni, R.; Giardini-Guidoni, A.; Tiribelli, R.; Cambi, R.; Rosi, Marzio

doi:10.1016/0009-2614(86)80147-6

Cited by 17 publications

(5 citation statements)

References 22 publications

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“…The phenomenon encountered here is referred to as the breakdown of the molecular orbital picture of ionization [14], and according to the classification scheme introduced by Cederbaum et al [14] most of the satellites above 40 eV are final-state correlation satellites. In general, the present theoretical results are similar to those from an earlier Green function study [26].…”

Section: The Overall Spectrumsupporting

confidence: 90%

The influence of shape resonance phenomena on the valence shell photoionization dynamics of silicon tetrafluoride

Holland

Potts

Karlsson

et al. 2002

J. Phys. B: At. Mol. Opt. Phys.

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The complete valence shell photoelectron spectrum of silicon tetrafluoride has been studied both experimentally and theoretically. Photoelectron angular distributions and branching ratios have been measured in the photon energy range 17-120 eV, using synchrotron radiation, and compared with previous theoretical predictions. The spectra demonstrate that shape resonance phenomena affect the photoionization dynamics of the outer valence shell orbitals, and the predicted shape resonance in the a1 channel, close to threshold, has been confirmed experimentally. At higher energies, the effects of the e and t2 symmetry shape resonances have been observed, for the first time, in the photoelectron asymmetry parameters. Partial photoionization cross sections have been derived by combining the experimental branching ratios with the total ion yield curve and normalizing the results to the absolute photoabsorption cross section. The partial cross sections so obtained have been compared with theoretical curves reported in two earlier studies. The vertical ionization energies and spectroscopic factors for the entire valence shell photoelectron spectrum have been computed using the third-order algebraic-diagrammatic construction approximation scheme for the one-particle Green function.

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Section: The Overall Spectrumsupporting

confidence: 90%

The influence of shape resonance phenomena on the valence shell photoionization dynamics of silicon tetrafluoride

Holland

Potts

Karlsson

et al. 2002

J. Phys. B: At. Mol. Opt. Phys.

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“…The numerous poles, or inner valence ionization energies are mainly dispersed into many lines over the 40--49 eV region. 21 The Si2P3I2 ionization energy in SiF 4 has been measured to be at 111.6 eV (Ref. 26) and the Si2P3/2.1I2 splitting is approximately 0.6 eV.…”

Section: Inner Valencementioning

confidence: 99%

Dissociative single, double, and triple photoionization of silicon tetrafluoride in the valence shell and silicon 2p regions (hν=33–133 eV)

Igarashi

Brion

Koyano

et al. 1991

The Journal of Chemical Physics

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Dissociative double photoionization of singly deuterated benzene molecules in the 26-33 eV energy range Valence and inner-valence shell dissociative photoionization of CO in the 26-33 eV range. I. Ion-electron kinetic energy correlation and laboratory frame photoemission Dissociative single and double photoionization of CH3F in the region 20-110 eV studied by mass spectrometry and the photoion-photoion coincidence method J. Chem. Phys. 95, 1619 (1991); 10.1063/1.461074Dissociative single, double, and triple photoionization of OCS in the region hν=20-100 eV studied by mass spectrometry and the photoion-photoion coincidence method J. Chem. Phys. 95, 909 (1991);The photoionization of SiF 4 in the valence shell and Si2p innershell regions has been studied using time-of-flight mass spectrometry and synchrotron radiation over the photon energy range 33-133 eV. Photoionization branching ratios are reported for stable singly and doubly charged ions arising from the various possible molecular and dissociative photoionization processes. The time-of-flight mass spectrometer used in the present work employs very efficient ion extraction fields and this results in very much higher relative abundances of energetic fragmentations than were reported in earlier published work [Lablanquie et al., J. Chem. Phys. 90,7078 (1989)]. Photoion-photoion coincidence (PIPICO) techniques have been used to investigate the relative yields of Coulomb explosion decomposition products and threshold energies for dissociative double photoionization in the valence shell and silicon 2p regions. The dominant process in the Si2p region is (F + + Si + ). The PIPICO spectra show additional peaks with thresholds in the Si2p region and these structures arise from the dissociation of triply charged ions into the exit channels (

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“…A literature survey reveals that previous theoretical and experimental studies on low-and intermediate-energy scattering from SiF 4 are quite restricted in their scope. They include (a) total cross sections [10][11][12], (b) elastic differential and total cross sections as calculated by the continuum multiple scattering χ α method [13], (c) independent atom method (IAM) theory results [14], (d) vibrational excitation cross sections as estimated from the Born approximation [15], (e) results from swarm analysis [16], (f) an electron momentum spectroscopy study [17], (g) total [18] and partial [19] ionization cross sections and their corresponding calculated values [20,21], (h) studies of dissociation into neutral fragments [16] and dissociative electron attachment [22][23][24][25], and (i) energy loss spectra [26][27][28][29]. However it is clear from those references that no differential cross section (DCS) measurements for elastic scattering or vibrational excitation in SiF 4 have been reported for electron energies below 50 eV, which are crucial for plasma modelling studies.…”

Section: Introductionmentioning

confidence: 99%

A study of electron interactions with silicon tetrafluoride: elastic scattering and vibrational excitation cross sections

Kato

Anzai

Ishihara

et al. 2012

J. Phys. B: At. Mol. Opt. Phys.

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We report absolute differential cross sections for elastic electron scattering from SiF4. The incident electron energy range is 1.5–200 eV, while the scattered electron angular range was from 15° to 150°. The absolute scale of the differential cross sections was set using the relative flow technique with helium as the reference species. Corresponding integral elastic and momentum transfer data have been derived from our differential measurements. As a part of this study, independent atom model calculations were also performed. Those computations were found to be in generally quite good accord with the experimental results at both the differential and integral levels. In addition, excitation function measurements at a scattering angle of 60° and in the energy range 1–14 eV for the ν3 (d-stretch) and ν4 (d-deformation) fundamental vibrational modes are reported. Finally, differential cross sections for all four fundamental modes (ν1, ν2, ν3, ν4) at the single electron energy of 7 eV are given. These vibrational excitation measurements, when coupled with the elastic angular distributions in the 5–8 eV energy range, demonstrate the presence of a t2-symmetry shape resonance.

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Ionization potentials and electron momentum distributions for SiF4 valence-shell orbitals: an (e,2e) spectroscopic investigation and Green's function study

Cited by 17 publications

References 22 publications

The influence of shape resonance phenomena on the valence shell photoionization dynamics of silicon tetrafluoride

The influence of shape resonance phenomena on the valence shell photoionization dynamics of silicon tetrafluoride

Dissociative single, double, and triple photoionization of silicon tetrafluoride in the valence shell and silicon 2p regions (hν=33–133 eV)

A study of electron interactions with silicon tetrafluoride: elastic scattering and vibrational excitation cross sections

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