Ionizing and non-ionizing kerma factors in silicon for China Spallation Neutron Source neutron spectrum

Jin, Xiaoming; Liu, Yan; Su, Chunlei; Chen, Wei; Wang, Chen-Hui; Yang, Shanchao; Guo, Xiaoqiang

doi:10.1007/s41365-019-0664-5

Cited by 10 publications

(4 citation statements)

References 22 publications

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“…The China spallation neutron source (CSNS) is the first spallation neutron source in China, and is mainly used for the experimental study of neutron scattering. [23][24][25][26][27][28][29] The backstreaming white neutron beam line (Back-n) was built in the beginning of 2018, and this is a branch line of the CSNS. [30,31] It is mainly used for neutron data measurements.…”

Section: Experimental Methodsmentioning

confidence: 99%

Measurements of the ¹⁰⁷ Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility

Liu

Jiang

et al. 2022

Chinese Phys. B

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Silver indium cadmium (Ag-In-Cd) control rod is widely used in pressurized water reactor nuclear power plants, and which is continuously consumed in a high neutron flux environment. The mass ratio of 107Ag in Ag-In-Cd control rod is 41.44%. To accurately calculate the consumption value of the control rod, a reliable neutron reaction cross section of the 107Ag is required. Meanwhile, 107Ag is also an important weak r nuclei. Thus, the cross sections for neutron induced interactions with 107Ag are very important both in nuclear energy and nuclear astrophysics. The (n, γ) cross section of 107Ag has been measured in the energy range of 1-60 eV using a back streaming white neutron beam line at China spallation neutron source. The resonance parameters are extracted by an R-matrix code. All the cross section of 107Ag and resonance parameters are given in this paper as datasets. The datasets are openly available at https://www.scidb.cn/s/aaUJbu.

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Section: Experimental Methodsmentioning

confidence: 99%

Measurements of the ¹⁰⁷ Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility

Liu

Jiang

et al. 2022

Chinese Phys. B

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“…The TID induced by gamma rays and neutrons is no more than 300 rad(Si) when the neutron fluence is 3.0 × 10 11 n/cm 2 . [9] All the samples were in the unbiased and off-line condition when they were exposed. After irradiation, all the samplers were tested under the same condition as they were tested before irradiation.…”

Section: Methodsmentioning

confidence: 99%

Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source*

Xu¹,

Wang²,

Xue³

et al. 2020

Chinese Phys. B

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Neutron radiation experiments of optocouplers at back-streaming white neutrons (back-n) in China Spallation Neutron Source (CSNS) are presented. The displacement damages induced by neutron radiation are analyzed. The performance degradations of two types of optocouplers are compared. The degradations of current transfer ratio (CTR) are analyzed, and the mechanisms induced by radiation are also demonstrated. With the increase of the accumulated fluence, the CTR is degrading linearly with neutron fluence. The radiation hardening of optocouplers can be improved when the forward current is increased. Other parameters related to CTR degradation of optocouplers are also analyzed.

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“…On the other hand, neutron irradiation of silicon-based devices can cause non-ionization energy deposition, leading to atomic displacements [6]. Using equation ( 1) to calculate the nonionizing energy loss (NIEL) resulting from neutron incidence, and employing equation ( 2) to calculate the ionizing energy loss (IEL) resulting from γ-ray incidence [24,25],…”

Section: Physical Processmentioning

confidence: 99%

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

Tang,

Zhang,

Xiao

et al. 2024

J. Phys. D: Appl. Phys.

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The Silicon bipolar junction transistor (Si BJT) is widely used as a discrete device, but it's susceptible to damage from both ionization and displacement in nuclear radiation environments. Current research primarily focuses on steady-state irradiation to study the synergistic damage mechanism caused by ionization and displacement, with a lack of research on transient synergistic damage. This paper studies the energy deposition and distribution with different incident angles and energies when neutrons and photons are simultaneously incident, and found similarities in the energy deposition between low-energy photons and 1 MeV neutrons as well as high-energy photons and 1 MeV neutrons in synergistic damage. Additionally, transient current under simultaneous neutron and photon irradiation was calculated using COMSOL software. Simulation results indicate that by adjusting the number of photons, it is feasible to simulate the transient electrical characteristics of high-energy photons utilizing low-energy photons for synergistic damage. Hence, a novel characterization method, combining laser simulation and neutron sources, is developed to test the transient electrical characteristics of Si BJT with synergistic damage.

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Ionizing and non-ionizing kerma factors in silicon for China Spallation Neutron Source neutron spectrum

Cited by 10 publications

References 22 publications

Measurements of the ¹⁰⁷ Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility

Measurements of the ¹⁰⁷ Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility

Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source*

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

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Ionizing and non-ionizing kerma factors in silicon for China Spallation Neutron Source neutron spectrum

Cited by 10 publications

References 22 publications

Measurements of the 107 Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility

Measurements of the 107 Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility

Displacement damage in optocouplers induced by high energy neutrons at back-n in China Spallation Neutron Source*

Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

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Product

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Measurements of the ¹⁰⁷ Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility

Measurements of the ¹⁰⁷ Ag neutron capture cross sections with pulse height weighting technique at the CSNS Back-n facility