Ionizing Radiation Effects in MOS Devices

McGarrity, J.M.; McLean, F. B.; Oldham, T.R.; Boesch, H. E.

doi:10.1007/978-3-642-74723-6_26

Cited by 33 publications

(68 citation statements)

References 79 publications

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“…Next, we evaluated the sensor durability against EUV and soft-X-ray photons. In general, sensor displacement damage 16,17) can be ignored because the irradiated photonenergy is <1000 eV. Because the peripheral circuits are not X-ray-irradiated and the pixel array has only N-type MOS transistors and no PNPN structure, single-event latch-up is also not a problem.…”

mentioning

confidence: 99%

High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor

Harada

Teranishi

Watanabe

et al. 2019

Appl. Phys. Express

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We develop a high-quantum-efficiency, high-exposure-durability backside-illuminated CMOS image sensor for soft-X-ray detection. The backside fabrication process is optimized to reduce the dead-layer thickness, and the Si-layer thickness is increased to 9.5 μm to reduce radiation damage. Our sensor demonstrates a high quantum efficiency of >90% in the photon-energy range of 80–1000 eV. Further, its EUV-regime efficiency is ∼100% because the dead-layer thickness is only 5 nm. The readout noise is as low as 2.5 e− rms and the frame rate as high as 48 fps, which makes the device practical for general soft X-ray experiments.

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confidence: 99%

High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor

Harada

Teranishi

Watanabe

et al. 2019

Appl. Phys. Express

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“…[17] It has been noticed that both the shifting in threshold voltage and the variation in www.advmattechnol.de electrical conductance are attributed to the trapping of positive charge at the oxide interface. [175,[179][180][181] Figure 8h-k indicates the change of V th and the conductance with the irradiation time. It is suggested that the electrical properties of ZnO nanowires are controlled with induced charges.…”

Section: Oxide Semiconductors-based Tftsmentioning

confidence: 99%

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

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“…The exposure of a MOSFET to ionizing radiation affects a number of physical parameters of the device. The threshold voltage shift [13] (1) where is the oxide capacitance per unit area, is the distance from the gate electrode to the -interface, is the oxide thickness, is the trapped charge density within the gate oxide, and is the interface traps density creation; and the carrier mobility [4] (…”

Section: Standard Measurement Technique and Temperature As An Error S...mentioning

confidence: 99%

“…where is the pre-irradiation ZTC current. To verify ( 14), the build-up was measured after each irradiation session using the Subthreshold Swing Method [4]. The method correlates generation with the variations in the Subthreshold Slope of the I-V curves of the device (15) where is the Boltzmann constant, is the temperature, and is the change in the Subthreshold Slope.…”

Section: Modeling the Radiation Induced Shiftsmentioning

confidence: 99%

See 1 more Smart Citation

Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

Carbonetto

Inza

Lipovetzky

et al. 2011

IEEE Trans. Nucl. Sci.

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In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data.

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Ionizing Radiation Effects in MOS Devices

Cited by 33 publications

References 79 publications

High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor

High-exposure-durability, high-quantum-efficiency (>90%) backside-illuminated soft-X-ray CMOS sensor

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

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