2008
DOI: 10.1016/j.jaap.2007.11.008
|View full text |Cite
|
Sign up to set email alerts
|

IR laser-induced co-decomposition of trisilane and thiirane for deposition of polycarbosilthiane films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2008
2008
2008
2008

Publication Types

Select...
1

Relationship

1
0

Authors

Journals

citations
Cited by 1 publication
(2 citation statements)
references
References 38 publications
0
2
0
Order By: Relevance
“…H 2 SiS 2 ! H 2 S + SiS) [28], but the recorded FTIR spectra do not allow to distinct whether this gas-phase reactive species survives or is trapped with silylenes to yield silthiane polymer.…”
Section: Plausible Reactions In the Gas Phasementioning
confidence: 99%
See 1 more Smart Citation
“…H 2 SiS 2 ! H 2 S + SiS) [28], but the recorded FTIR spectra do not allow to distinct whether this gas-phase reactive species survives or is trapped with silylenes to yield silthiane polymer.…”
Section: Plausible Reactions In the Gas Phasementioning
confidence: 99%
“…Thus, the IR laser-induced co-decomposition of dimethyl selenide and trisilane [26] or dimethyl selenide and www.elsevier.com/locate/jaap 1,3-disilacyclobutane [27] yields gaseous SiSe and affords chemical vapor deposition of nanostructured H/Si/Se/C films. In addition, the IR laser co-decomposition of trisilane and thiirane allows gas-phase formation of SiS and chemical vapor deposition of polycarbosilthiane films [28].…”
Section: Introductionmentioning
confidence: 99%