IR spectroscopic study of the adsorption of ethylene and hydrogen on yttrium oxide

Krasil'nikova, M.K.; Lygin, V. I.; Topchieva, K. V.

doi:10.1007/bf00523781

Cited by 1 publication

(1 citation statement)

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“…It is well known that the resistance of WO 3 film as an n -type semiconductor material is increased in the presence of oxidizing gases and decreased when exposed to reducing gases [11,26]. Besides, yttrium oxide, as an n-type semiconductor material, may exhibit dehydration or dehydrogenation properties, depending on its pretreatment, in decomposition reactions of alcohols; it may also be a catalyst for the hydrogenation of olefins [27]. Therefore, the combination of these two oxides is supposed to produce an n + -type semiconductor material and the final product would be more sensitive to some gases, and the humidifying dependency of the mixed films should probably decrease due to the presence of yttria.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Mixed xWO3(1-x)Y2O3 Nanoparticle Thick Film for Gas Sensing Application

Abadi

Hamidon

Shaari

et al. 2010

Sensors

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Microstructural, topology, inner morphology, and gas-sensitivity of mixed xWO3(1-x)Y2O3 nanoparticles (x = 1, 0.95, 0.9, 0.85, 0.8) thick-film semiconductor gas sensors were studied. The surface topography and inner morphological properties of the mixed powder and sensing film were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). Also, gas sensitivity properties of the printed films were evaluated in the presence of methane (CH4) and butane (C4H10) at up to 500 °C operating temperature of the sensor. The results show that the doping agent can modify some structural properties and gas sensitivity of the mixed powder.

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Section: Introductionmentioning

confidence: 99%