IR study of short-range and local order in SiO2 and SiOx films

Lisovskiĭ, I. P.; Литовченко, В.Г.; Lozinskii, V. B.; Frolov, S.I.; Flietner, H.; Füssel, W.; Schmidt, Elena G.

doi:10.1016/0022-3093(95)00118-2

Cited by 56 publications

(36 citation statements)

References 12 publications

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“…The same assumptions as in the substitution of Al(OH) − 4 with paired Si tetrahedra have been contemplated to calculate the potential energy surface by relaxing the bond lengths of Si (2) (a) 1 • and ∼1.63Å, respectively, elsewhere. 25,26) The calculated geometrical parameters are found to be comparable with these reported values. The total energy obtained in the optimized structure of each molecule is also shown in the corresponding figure.…”

Section: Calculation Approaches For the Activated State Energysupporting

confidence: 81%

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Ab InitioCalculations for the Substitutions of Al(OH)^-₄and SO^2-₄with Si Tetrahedra

Rahman¹,

Nagasaki²,

Tanaka³

2001

Journal of Nuclear Science and Technology

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We have studied the interaction phenomena for the substitutions of Al(OH) − 4 and SO 2− 4 with both paired and bridging Si tetrahedra likely to be occurred in C-S-H gel coexisting with ettringite system. Gaussian 94 program has been used to obtain the total energy of the molecule in the optimized structure employing HF/3-21G * level of theory. It has been investigated that the net charge on the substitution site causes the modification of the original structure during the substitution. The substitutions of Al(OH)

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Section: Calculation Approaches For the Activated State Energysupporting

confidence: 81%

“…25,26,28) It is observed that Si-O and S-O bond distances decrease for the substitution of SO Fig. 4(e).…”

Section: Calculation Approaches For the Activated State Energymentioning

confidence: 90%

Ab InitioCalculations for the Substitutions of Al(OH)^-₄and SO^2-₄with Si Tetrahedra

Rahman¹,

Nagasaki²,

Tanaka³

2001

Journal of Nuclear Science and Technology

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“…The shift of minimum position from ν m1 = 1032 cm −1 (x = 0.98) to ν m2 = 1073 сm -1 (x = 1.76) is observed. This shift of the frequency minimum is indicative of phase separation and transformation of the SiO x film [21]. As a result of the structure transformation, the film properties are significantly changed.…”

Section: Laser-stimulated Phase Separation Of the Sio X /Si Structurementioning

confidence: 96%

“…At this stage of laser annealing, the phase of stoichiometric silicon oxide SiO 2 are formed. This phase is represented by complexes of SiO 4 tetrahedrons combined into 4-and 6-fold rings, and Si nanocrystals [21,26]. As a result of these changes, the higher density of the interface states between SiO 2 and Si nanocrystals has been appeared, and the number of conductive states in the amorphous SiO x matrix are reduced.…”

Section: Laser-stimulated Phase Separation Of the Sio X /Si Structurementioning

confidence: 99%

Nanostructuring the SiOx layers by using laser-induced self-organization

Steblova¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The processes of laser-induced transformation of SiO x oxide layers into the nanocomposite ones were studied. The possibility of phase separation in the form of Si nanocrystals surrounded by corresponding SiO 2 oxide matrix under irradiation by nanosecond pulses of YAG:Nd +3 -laser were shown. Laser radiation at the fundamental wavelength, λ 1 = 1064 nm, and second harmonic, λ 2 = 532 nm, were applied at researches. The size and surface concentration of nanofragments dependences on the intensity and wavelength of the laser irradiation have been determined from experimental data based on atomic force microscopy, infrared transmission spectra and electrophysical measurements. SiO x nanocomposite layers containing Si nanoparticles, the size of which depends on laser beam intensity and wavelength, have been obtained. The processes of nanoparticles formation occur mainly through generation and mass transfer of interstitial atoms in the solid mode (before the melting point threshold) due to the effect of laser thermal shock.

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“…The optical density spectra of the initial and annealed films were mathematically decomposed into elementary components with Gaussian profiles, according to the method proposed in [23]. The obtained results show that the main absorption band of the initial SiO x film is the sum of seven subbands resulting from transverse (TO mode) and longitudinal (LO mode) valence fluctuations of bridging oxygen that is the part of the molecular complexes Thus, the heat treatment of SiO x films causes the decay of molecular complexes of weakly oxidized silicon and promotes formation of Si clusters and heavily oxidized silicon dioxide matrix.…”

Section: Thermal Annealingmentioning

confidence: 99%

Transformation of SiOx films into nanocomposite SiO2(Si) films under thermal and laser annealing

Steblova¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiO x film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiO x film. The influence of thermal and laser annealing on SiO x film properties has been investigated. Formation of silicon nanoislands on oxide film surface has been observed by AFM both after thermal and laser annealing. The height and surface density of the nanoislands depends both on the silicon content in the initial SiO x film and temperature of thermal annealing. The higher annealing temperature causes formation of large nanoislands, but their surface density decreases. Comparison of nanoislands created at thermal and laser annealing shows that in case of laser annealing the nanoislands are higher and their surface density is lower. The intensity of laser irradiation influences on nanoisland parameters significantly. The growth of electrical conductivity with thermal annealing temperature has been observed. The influence of gas atmosphere during annealing is also significant in case of higher temperatures. In case of laser annealing at the beginning at low laser irradiation intensities, the SiO x film conductivity increases, but the following growth of intensity causes the decrease in electrical conductivity.

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IR study of short-range and local order in SiO2 and SiOx films

Cited by 56 publications

References 12 publications

Ab InitioCalculations for the Substitutions of Al(OH)^-₄and SO^2-₄with Si Tetrahedra

Ab InitioCalculations for the Substitutions of Al(OH)^-₄and SO^2-₄with Si Tetrahedra

Nanostructuring the SiOx layers by using laser-induced self-organization

Transformation of SiOx films into nanocomposite SiO2(Si) films under thermal and laser annealing

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IR study of short-range and local order in SiO2 and SiOx films

Cited by 56 publications

References 12 publications

Ab InitioCalculations for the Substitutions of Al(OH)-4and SO2-4with Si Tetrahedra

Ab InitioCalculations for the Substitutions of Al(OH)-4and SO2-4with Si Tetrahedra

Nanostructuring the SiOx layers by using laser-induced self-organization

Transformation of SiOx films into nanocomposite SiO2(Si) films under thermal and laser annealing

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Product

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Ab InitioCalculations for the Substitutions of Al(OH)^-₄and SO^2-₄with Si Tetrahedra

Ab InitioCalculations for the Substitutions of Al(OH)^-₄and SO^2-₄with Si Tetrahedra