Iridium Silicide Formation by Rapid Thermal Annealing

Rodrı́guez, T.; Wolters, H.; Almendra, A.; Sanz‐Maudes, J.; Silva, M.F. Da; Soares, J.C.

doi:10.1557/proc-299-313

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…30 ͑4͒ After annealing at 450°C for 2 h, there is evidence of interface degradation in terms of simple thermionic emission model ͑n idealities Ͼ1.1͒. Similar discussion as above can be applied in this case where the lack of homogeneity can be attributed to the formation of some IrSi 1.75 embedded in the Ir 1 Si 1 .…”

Section: Discussionmentioning

confidence: 78%

Effect of the in situ thermal treatments on Ir/n-type Si (111) Schottky contacts

Jiménez-Leube¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this article we analyze the effect of the in situ thermal treatments on the properties of the Ir/ n-type Si ͑111͒ Schottky contacts. The samples were annealed in the evaporation system at 400°C for 15 min and at 450°C for 15 min or 2 h. Rutherford backscattering spectroscopy spectra and secondary ion mass spectroscopy compositional profiles indicate that as result of the different thermal treatments performed in the samples there is a clear diffusion of silicon into the iridium layer but the composition of the metal-semiconductor interface cannot be determined. It has been shown previously that a small quantity of IrSi can be formed at an Ir-Si interface when Ir layers are deposited on Si. The current-voltage-temperature ͑I-V-T͒ behavior of these diodes indicates that it is dominated by the effect of spatial fluctuations of the surface barrier. After the thermal treatment at 400°C for 15 min the diodes show I-V characteristics that can be perfectly justified by the unidimensional model of the thermionic emission theory. The Schottky barrier value at 0 K ͑0.92 eV͒ and the temperature coefficient of the barrier ͑3•10 Ϫ4 V/K͒ corresponds with that previously reported for the IrSi. When the annealing temperature is raised to 450°C, the resulting devices show a nonhomogeneous barrier with similar values to those found at room temperature. Increasing the annealing time to 2 h leads to devices showing an increase in the ideality factor value ͑1.12͒, along with a barrier height value at room temperature ͑0.86 eV͒ which coincides with that previously reported for the IrSi 1.75 . The 0 K barrier height ͑0.72 eV͒ indicates that a phase transformation at the interface has taken place.

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Section: Discussionmentioning

confidence: 78%

Effect of the in situ thermal treatments on Ir/n-type Si (111) Schottky contacts

Jiménez-Leube¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…19 The Rutherford backscattering spectra ͑RBS͒ 20,21 show that IrSi and IrSi 1.75 are the only compounds formed for annealing temperatures up to 675°C and that both phases grow simultaneously and can coexist with unreacted Ir metal. At low temperature, the simultaneous presence of unreacted Ir and IrSi is suggested.…”

Section: Discussionmentioning

confidence: 99%

High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealing

Sanz‐Maudes

Jiménez-Leube

Clément

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The silicidation of iridium layers by rapid thermal annealing as a function of temperature and processing time is studied for both vacuum and argon atmosphere. The electrical properties of the resulting IrSi/n-type Si diodes are determined and related to the interface properties. I -V -T spectroscopy allows us to detect interface modifications even in the case where other diagnostics cannot be employed. Rapid thermal annealing ͑RTA͒ vacuum annealed diodes show inhomogeneous potential distribution at the metal-semiconductor interface. This is related with the coexistence of different metallurgical phases ͑Ir, IrSi, and IrSi 1.75 ) at the interface as a consequence of the thermal treatments. The estimated value for the Schottky barrier height of the IrSi 1.75 is 0.7 eV. In contrast, RTA argon annealed diodes show more reproducible characteristics. The main effect of the reaction atmosphere is to slow down the reaction rate as well as to inhibit the IrSi 1.75 formation. This could be related with the residual oxygen contents of the reaction atmosphere. RTA argon annealing at 500°C during 5 min is a reliable procedure for homogeneous IrSi infrared Schottky barrier detectors fabrication that can be employed in an industrial environment.

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Comparison between furnace and rapid thermal annealed iridium silicide Schottky barrier diodes

Jimenez‐Leube¹,

Clément²,

Almendra³

et al. 1995

Materials Science and Technology

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Iridium Silicide Formation by Rapid Thermal Annealing

Cited by 4 publications

References 8 publications

Effect of the in situ thermal treatments on Ir/n-type Si (111) Schottky contacts

Effect of the in situ thermal treatments on Ir/n-type Si (111) Schottky contacts

High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealing

Comparison between furnace and rapid thermal annealed iridium silicide Schottky barrier diodes

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