Iridium/Silicon Ultrathin Film for Ultraviolet Photodetection: Harnessing Hot Plasmonic Effects

Abstract

The phenomenon of hot carriers, which are generated through the nonradiative decay of surface plasmons in ultrathin metallic films, offers an intriguing opportunity for subbandgap photodetection even at room temperature. These hot carriers possess sufficient energy to inject into the conduction band of a semiconductor material. The groundbreaking use of iridium (Ir) ultrathin film as an ultraviolet (UV) plasmonic material on silicon (Si) for high‐performance photodetectors (PHDs) has been successfully demonstrated. Elevating the thickness of the sputtered Ir film to 4 nm yields a notable surge in photocurrent, registering an impressive 600 μA under 365 nm UV illumination with electron mobility of 1.37E3 cm2 V−1 s. This PHD exhibits excellent OFF‐ON photoresponses at various applied voltages ranging from 0 to 5 V, maintaining a stable photocurrent. Under UV illumination, it displays exceptional performance, achieving a high detectivity of 1.25E14 Jones and a responsivity of 1.28 A W−1. These outstanding results underscore the significant advantages of increasing the thickness of the Ir film in PHDs, leading to improvements in conductivity, detectivity, external quantum efficiency, responsivity, as well as superior sensitivity for light detection.

Simultaneously improving the pore structure and electron conductive network of the anode catalyst layer via SnO2 doping for proton exchange membrane water electrolysis

“…SnO 2 exhibits a relatively high electron mobility (240 cm 2 V −1 s −1 ), 30 but as a noble metal, the electron mobility of Ir catalyst is even higher (1370 cm 2 V −1 s −1 ). 31 Consequently, excessive doping of SnO 2 leads to an increase in the ohmic resistance, such as CCM-1.5Ir-0.75SnO 2 . However, the lower ohmic resistance of CCM-1.5Ir-0.50SnO 2 is attributed to the optimization of its catalyst layer structure through SnO 2 doping.…”

Negative Photoconductivity in 2D α-MoO3/Ir Self-Powered Photodetector: Impact of Post-Annealing

“…Specifically, we turn our attention to photocurrent gain, responsivity, EQE, and detectivity, which are assessed under both un-annealed and post-annealed conditions for Mo/2 nm Ir/SiO 2 /Si and Mo/4 nm Ir/SiO 2 /Si configurations, as represented graphically in Figure 8. It is worth noting that these parameters have been extensively explored and discussed in numerous research articles [53,54]. As anticipated, the 2 nm thick Ir sample demonstrates superior performance characteristics following the annealing treatment.…”

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

“…This enhancement was attributed to the plasmon-mediated photovoltaic effect observed in both semiconductor- and chemical-type solar cells. The effect goes beyond merely increasing sunlight absorption [ 8 , 9 ]. In 2000, Antonio Martí and his research group from the Political University of Madrid—Instituto de Energies Solaire, Madrid, Spain discussed the possibility of fabricating the intermediate-band solar cell (IBSC), a cell with the potential to achieve 63.2% efficiency under concentrated sunlight, using quantum dot (QD) technology [ 10 ].…”