Iron-based ferromagnetic van der Waals materials

Abstract

Two-dimensional magnets with high Curie temperatures have recently been produced by incorporating the prototypical ferromagnetic element, iron, into 2D van der Waals layers using the iron-based layered compounds known as Fe x GeTe2 (x = 3, 4, 5). In these materials, each layer consists of an Fe x Ge slab sandwiched by chalcogen tellurium (Te) atoms and the layers are stacked by van der Waals interactions. Their intrinsically high Curie temperatures, as high as room temperature, and large magnetization have drawn significant attention. Moreover, their ability to be tuned using their extrinsic parameters, such as gating and doping, makes their application in spintronics promising. Since they are primarily metallic materials with high electrical conductivity, it is easy to characterize their transport properties and thus directly use them for spintronic devices. In this review, we summarize the magnetic properties of layered iron-based magnetic materials and the spin transport phenomena in devices made of these materials, and provide perspective and insight into the characteristics of these unique materials.

Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices

“…Figure 1(e) shows the schematic of the 2D heterojunction based on vdWs materials. A series of 2D vdWs materials, such as Fe 3 GeTe 2 , MoS 2 and WSe 2 [37][38][39], exhibit promising characteristics with high coercivity, large TMR value and high PMA [40], which can be used to fabricate the promising MTJ device.…”

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

“…In recent years, the rise of exploration and engineering in advanced 2D vdW materials, such as MoS 2 , WSe 2 , and Fe 3 GeTe 2 (FGT), and 2D vdW antiferromagnets, etc., has provided a new materials platform for further study of spintronics [15][16][17][18][19][20][21][22][23][24][25][26][27]. FGT has high-quality surfaces, large coercivity, and perpendicular magnetic anisotropy (PMA) [28]. In addition, more systematic studies have reported on the enhancement of the Curie temperature (T c ) of FGT [29][30][31] and the room temperature ferromagnetism of FGT with the gate modulation [32], ion doping [33,34], proximity coupling [35], exchange coupling effect [17], and atomic ratio engineering [36], demonstrating the excellent potential applications from the materials science and engineering performance perspectives.…”

Stacking and tuning effects on magneto-electronic and electric contact features for arsenene/Fe3GeTe2 van der Waals heterostructure

“…Besides, when FGT is the substrate, due to its buckled atomic structure, the interface coupling can modulated the energy gap at the edges of bilayer Bi(110) [44]. In short, there have been some researches on FGT properties [45] so far. However, constructing suitable FGT based heterostructures to improve its magneto-electronic properties and Curie temperature by interface effects and to expand its application potential still needs to be further explored.…”