“…Wide-bandgap (WBG) power semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have been widely researched owing to their advantages of high withstand voltage, fast switching and high-frequency operation, high-temperature tolerance, and low on-resistance [1,2,3,4,5,6,7,8]. For instance, miniaturization and high output power density of power converters can be achieved by the high-frequency operation [1,9,10,11].…”