Iron-mediated growth of epitaxial graphene on SiC and diamond

Cooil, Simon; Song, Fei; Williams, G. T.; Roberts, O. R.; Langstaff, D. P.; Jørgensen, Bjarke; Høydalsvik, Kristin; Breiby, Dag W.; Wahlström, Erik; Evans, D. A.; Wells, Justin W.

doi:10.1016/j.carbon.2012.06.050

Cited by 42 publications

(46 citation statements)

References 28 publications

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“…These properties mean that graphene could be used in many technological fields including transparent electrodes, field emitters, biosensors, and batteries, to cite but a few examples. Many techniques exist for producing graphene including chemical vapor deposition, chemical reduction of graphene oxide, exfoliation, epitaxial growth on SiC or metal substrates, and physical vapor deposition methods including pulsed laser deposition (PLD) . Whatever the synthesis route chosen, many experimental factors affect the graphene nanoarchitecture and properties.…”

Section: Introductionmentioning

confidence: 99%

Raman study of the substrate influence on graphene synthesis using a solid carbon source via rapid thermal annealing

Bleu

Bourquard

Loir

et al. 2019

J Raman Spectroscopy

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We report the results of a comparative investigation of graphene films prepared on Si(100) and fused silica (SiO2) combining pulsed laser deposition and rapid thermal annealing using Ni catalyst. The effect of modifying the substrate and/or growth temperature (600–1,000°C) of graphene synthesis was investigated by Raman microspectroscopy mapping. Graphene grown on Si(100) was multilayered, and various nickel silicide phases had formed underneath, revealing dependence on the growth temperature. Films prepared on SiO2 mainly comprised bilayered and trilayered graphene, with no traces of nickel silicide. Analysis of Raman D, G, and 2D peak intensities and positions showed that modifying the growth temperature had different effects when a Si(100) or a SiO2 substrate is used. These findings advance our understanding of how different combinations of substrate and thermal processing parameters affect graphene synthesis from solid carbon source using nickel as a catalyst. This knowledge will enable better control of the properties of graphene film (defects, number of layers, etc.) and will have a high potential impact on the design of graphene‐based devices for scientific or industrial applications.

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Section: Introductionmentioning

confidence: 99%

Raman study of the substrate influence on graphene synthesis using a solid carbon source via rapid thermal annealing

Bleu

Bourquard

Loir

et al. 2019

J Raman Spectroscopy

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show abstract

“…It has a large band gap and possesses excellent properties such as high thermal stability, radiation hardness, chemical resistance, and heat dissipation [7]. There have been some experimental studies on the electronic properties and synthesis of this sp 2 (graphene)-on-sp 3 (diamond) system [6,[8][9][10][11][12]. The graphene-on-diamond system has also been explored in many applications such as high-frequency graphene transistors [13] and spin-polarized conducting wires [14].…”

Section: Introductionmentioning

confidence: 99%

First Principle Study of the Attachment of Graphene onto Different Terminated Diamond (111) Surfaces

Zhao

Larsson

2019

Advances in Condensed Matter Physics

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The adhesion of a graphene monolayer onto terminated or 2x1-reconstructed diamond (111) surfaces has in the present study been theoretically investigated by using a Density Functional Theory (DFT) method. H, F, O, and OH species were used for the surface termination. The generalized gradient spin density approximation (GG(S)A) with the semiempirical dispersion corrections were used in the study of the Van der Waals interactions. There is a weaker interfacial bond (only of type Wan-der-Waals interaction) at a distance around 3 Å (from 2.68 to 3.36 Å ) for the interfacial graphene//diamond systems in the present study. The strongest binding of graphene was obtained for the H-terminated surface, with an adhesion energy of -10.6 eV. In contrast, the weakest binding of graphene was obtained for F-termination (with an adhesion energy of -2.9 eV). For all situations in the present study, the graphene layer was found to retain its aromatic character. In spite of this, a certain degree of electron transfer was observed to take place from graphene to Oontop-, Obridge-, and OH-terminated diamond surface. In addition, graphene attached to Oontop-terminated surface showed a finite band gap.

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“…Transition metals, such as nickel 18 and iron 19 , have been used to demonstrate growth of multilayer and single-layer graphene on diamond (001) and (111) surfaces, respectively, by annealing them at high temperatures. However, in both cases, the resulting film still contains metals at the graphene–diamond interface, therefore not suitable for direct device fabrication.…”

mentioning

confidence: 99%

Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

et al. 2016

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The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the process can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. In addition, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics.

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Iron-mediated growth of epitaxial graphene on SiC and diamond

Cited by 42 publications

References 28 publications

Raman study of the substrate influence on graphene synthesis using a solid carbon source via rapid thermal annealing

Raman study of the substrate influence on graphene synthesis using a solid carbon source via rapid thermal annealing

First Principle Study of the Attachment of Graphene onto Different Terminated Diamond (111) Surfaces

Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

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