The water splitting activity of hematite
is sensitive to the film
processing parameters due to limiting factors such as a short hole
diffusion length, slow oxygen evolution kinetics, and poor light absorptivity.
In this work, we use direct current (DC) magnetron sputtering as a
fast and cost-effective route to deposit metallic iron thin films,
which are annealed in air to obtain well-adhering hematite thin films
on F:SnO
2
-coated glass substrates. These films are compared
to annealed hematite films, which are deposited by reactive radio
frequency (RF) magnetron sputtering, which is usually used for depositing
metal oxide thin films, but displays an order of magnitude lower deposition
rate. We find that DC sputtered films have much higher photoelectrochemical
activity than reactive RF sputtered films. We show that this is related
to differences in the morphology and surface composition of the films
as a result of the different processing parameters. This in turn results
in faster oxygen evolution kinetics and lower surface and bulk recombination
effects. Thus, fabricating hematite thin films by fast and cost-efficient
metallic iron deposition using DC magnetron sputtering is shown to
be a valid and industrially relevant route for hematite photoanode
fabrication.